山东晶导微电子有限公司
M1 THRU M7
Jingdao Microelectronics
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V
PINNING
Forward Current - 1 A
PIN
FEATURES
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Easy to pick and place
• Lead free in comply with EU RoHS 2011/65/EU directives
DESCRIPTION
1
Cathode
2
Anode
1
2
Top View
Marking Code: M1~M7
Simplified outline SMA and symbol
MECHANICAL DATA
• Case: SMA
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 0.055g / 0.002oz
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Symbols
M1
M2
M3
M4
M5
M6
M7
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V DC
50
100
200
400
600
800
1000
V
Maximum Average Forward Rectified Current
I F(AV)
1
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
I FSM
30
A
Maximum Instantaneous Forward Voltage at 1 A
VF
1.1
V
IR
5
50
μA
Cj
15
pF
RθJA
75
°C/W
T j , T stg
-55 ~ +150
°C
Parameter
Maximum DC Reverse Current
T a = 25 °C
at Rated DC Blocking Voltage
T a =125 °C
Typical Junction Capacitance
Typical Thermal Resistance
(1)
(2)
Operating and Storage Temperature Range
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)P.C.B. mounted with 1.0 X 1.0" (2.54 X 2.54 cm) copper pad areas.
2015.11
SMA-A-M1~M7-1A1KV
Page 1 of 3
山东晶导微电子有限公司
M1 THRU M7
Jingdao Microelectronics
Fig.2 Typical Instaneous Reverse
Characteristics
Average Forward Current (A)
1.2
1.0
0.8
0.6
0.4
0.2
Single phase half-wave 60 Hz
resistive or inductive load
0.0
25
75
50
100
125
150
175
Instaneous Reverse Current ( μ A)
Fig.1 Forward Current Derating Curve
100
T J =150°C
10
T J =125°C
T J =100°C
1.0
T J =75°C
0.1
T J =25°C
0.01
0
Junction Capacitance ( pF)
TJ =
2 5°
C
00
=1
TJ
=1
25
°C
°C
0.5
TJ
Instaneous Forward Current (A)
1.0
0.8
0.9
600
800
Fig.4 Typical Junction Capacitance
Fig.3 Typical Forward Characteristic
0.2
0.1
0.6
400
200
Instaneous Reverse Voltage (V)
Case Temperature (°C)
100
T J =25°C
10
1
0.7
1.0
1.1
0.1
1.0
10
100
Reverse Voltage (V)
Instaneous Forward Voltage (V)
Peak Forward Surage Current (A)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
35
30
25
20
15
10
05
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
2015.11
www.sdjingdao.com
Page 2 of 3
山东晶导微电子有限公司
M1 THRU M7
Jingdao Microelectronics
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
A
A
SMA
c
a
VM
e
A
HE
g
e
E
A
D
E
HE
c
e
g
max
2.2
4.5
2.7
5.2
0.31
1.6
1.5
min
1.9
4.0
2.3
4.7
0.15
1.3
0.9
max
87
181
106
205
12
63
59
min
75
157
91
185
6
51
35
UNIT
mm
mil
g
e
A
D
The recommended mounting pad size
a
0.3
12
Marking
Type number
2.4
(94)
mm
Unit :
(mil)
2015.11
M1
M1
M2
M2
M3
M3
M4
M4
M5
M5
M6
M6
M7
M7
1.8
(71)
1.8
(71)
1.8
(71)
JD511214B6
Marking code
Page 3 of 3
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