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BZT52C10S

BZT52C10S

  • 厂商:

    BORN(伯恩)

  • 封装:

    SOD323

  • 描述:

    二极管配置:独立式;稳压值(标称值):10V;稳压值(范围):9.4V~10.6V;精度:-;功率:200mW;反向电流(Ir):200nA@7V;阻抗(Zzt):20Ω;

  • 数据手册
  • 价格&库存
BZT52C10S 数据手册
BZT52CxxS Series ZENER SOD323 Plastic-Encapsulate Zener Diode ROHS SOD-323 Features Low Zener Impedance  Power Dissipation of 200mW  High Stability and High Reliability Mechanical Data  SOD-323 Small Outline Plastic Package  Polarity: Color band denotes cathode end  Mounting Position: Any Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameters Symbol Value Power Dissipation Pd 200 1) mW Forward Voltage @IF=10mA Vf 0.9 2) Storage temperature range Ts -65-+150 V ℃ 1) 2) 3) Unit Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm² Short duration test pulse used to minimize self-heating effect f=1KHz Electrical Characteristics . ( Ratings at 25℃ ambient temperature unless otherwise specified). Zener Voltage Range Device Marking Maximum Zener Impedance Zzt Zzk Izk @Izt @Izk Ω mA Izt 1.5KExxA(CA) Vz@Izt Nom(V) Min(V) Max(V) mA Maximum Reverse Current Typical Temperature coefficent @ IZTC=mV/℃ Test Current IZTC IR VR uA V Min Max mA BZT52C2V4S WX 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 5 BZT52C2V7S W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0S W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3S W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6S W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9S W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3S W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7S W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1S W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6S W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52C6V2S WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8S WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5S WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2S WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1S WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10S WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11S WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12S WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13S WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 Rev 8: Nov 2014 www.born-tw.com Page 1 of 2 BZT52CxxSSeries ZENER SOD323 Plastic-Encapsulate Zener Diode Zener Voltage Range Device Marking Vz@Izt Izt Maximum Zener Impedance Zzt Zzk Izk @Izt @Izk Ω mA ROHS Maximum Reverse Current IR VR Test Current IZTC V Min Max mA BZT52C15S WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16S WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18S WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20S WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22S WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24S WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27S WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30S WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33S WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36S WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39S WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43S WU 43 40.0 46.0 2 100 700 1.0 0.1 32.0 10.0 12.0 5 BZT52C47S WV 47 44.0 50.0 2 100 750 1.0 0.1 35.0 10.0 12.0 5 BZT52C51S WW 51 48.0 54.0 2 100 750 1.0 0.1 38.0 10.0 12.0 5 Nom(V) Min(V) Max(V) mA uA Typical Temperature coefficent @ IZTC=mV/℃ SOD-323 PACKAGE OUTLINE Plastic surface mounted package Rev 8: Nov 2014 www.born-tw.com Page 2 of 2
BZT52C10S 价格&库存

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BZT52C10S
  •  国内价格
  • 5+0.08140
  • 20+0.07480
  • 100+0.06820
  • 500+0.06160
  • 1000+0.05852
  • 2000+0.05632

库存:3000

BZT52C10S
  •  国内价格
  • 20+0.10128
  • 200+0.08136
  • 600+0.07039
  • 3000+0.06043
  • 9000+0.05468
  • 21000+0.05162

库存:20142