S9012

S9012 PNP Silicon Epitaxial Planar Transistor FEATURES z High Collector Current.(IC= -500mA） z Complementary To S9013. z Excellent HFE Linearity. APPLICATIONS z High Collector Current. SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Dissipation 300 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ www.slkormicro.com 1 S9012 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-40V,IE=0 -0.1 μA Collector cut-off current ICEO VCE=-20V,IB=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-1V,IC=-50mA Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V Transition frequency fT VCE=-6V, IC= -20mA f=30MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz CLASSIFICATION Rank Range www.slkormicro.com OF B B 120 B B TYP MAX 400 150 MHz 5 hFE(1) L H J 120-200 200-350 300-400 2 UNIT pF S9012 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.slkormicro.com 3 S9012 SOT-23 Package Information SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J C 1.0Typical K 0.1Typical 2.35 2.45 All Dimensions in mm www.slkormicro.com 4