BC817-25

BC817 SOT-23 Plastic-Encapsulate Transistor BC817- 16 BC817- 25 BC817- 40 SOT-23 TRANSISTOR (NPN) FEATURES  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage  Complementary types: BC807 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current IC 0.5 A Power Dissipation Ptot 300 Thermal Resistance From Junction To Ambient RθJA 417 Tj 150 O Tstg - 55 to + 150 O Parameter Junction Temperature Storage Temperature Range mW O C/W C C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage VCBO IC= 10μA, IE=0 50 V Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 45 V Emitter-base breakdown voltage VEBO IE= 1μA, IC=0 5 V Collector cut-off current ICBO VCB= 45 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 μA hFE(1) VCE= 1V, IC= 100mA 100 hFE(2) VCE= 1V, IC= 500mA 40 DC current gain 600 Collector-emitter saturation voltage VCE(sat) (s C= 500mA, IB= 50mA 0.7 Base-emitter saturation voltage VBE(sat) (s C= 500mA, IB= 50mA 1.2 Base-emitter voltage VBE VCE= 1 V, IC= 500mA Collecter capactiance Cob VCB=10V ,f=1MHz Transition frequency fT CLASSIFICATION OF VCE= 5 V, f=100MHz IC= 10mA 1.2 10 100 pF MHz hFE (1) Rank BC817-16 BC817-25 BC817-40 Range 100-250 160-400 250-600 Marking 6A 6B 6C https://www.microdiode.com The above data are for reference only. Rev:2025A4 Page :1 BC817 Typical Characteristics Static Characteristic 0.8mA 200 COMMON EMITTER Ta=25℃ o 0.7mA 0.6mA 160 0.5mA 120 0.4mA 0.3mA 80 Ta=100 C 400 DC CURRENT GAIN (mA) 0.9mA 240 IC COLLECTOR CURRENT hFE —— IC 500 1mA hFE 280 300 o Ta=25 C 200 0.2mA 40 VCE= 1V IB=0.1mA 0 100 0 2 4 10 12 COLLECTOR-EMITTER VOLTAGE VCE 14 16 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1.0 Ta=25℃ 0.6 Ta=100℃ 500 100 VCEsat —— 0.4 β=10 0.8 10 COLLECTOR CURRENT VBEsat —— IC 1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 1 (V) IC (mA) IC β=10 0.3 0.2 Ta=100℃ 0.1 0.4 Ta=25℃ 0.2 0.1 1 10 IC 500 —— IC 0.0 0.1 500 100 COLLECTOR CURRENT 1 (mA) 10 100 COLLECTOR CURRENT VBE Cob / Cib 100 —— IC VCB / VEB f=1MHz IE=0 / IC=0 IC (mA) 50 o Ta=25 C (pF) 100 Cib C COLLECTOR CURRENT o 10 CAPACITANCE Ta=100 C Ta=25℃ 500 (mA) 10 1 Cob VCE=1V 0.1 0.3 1 0.4 0.5 0.6 0.7 BASE-EMITTER VOLTAGE fT —— 0.9 1.0 5 10 REVERSE VOLTAGE IC Pc 0.4 (MHz) 100 TRANSITION FREQUENCY fT 0 COLLECTOR POWER DISSIPATION Pc (W) 300 0.8 VBE(V) —— V (V) Ta 0.3 0.2 0.1 VCE=5V o Ta=25 C 10 1 60 10 COLLECTOR CURRENT IC (mA) 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) The curve above is for reference only. https://www.microdiode.com Rev:2025A4 Page :2 BC817 Outlitne Drawing SOT-23 Package Outline Dimensions θ A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol 1 e Dimensions In Millimeters Min Typ Max 0.65 1.40 0.20 0.00 0.30 0.55 0.20 0.08 2.70 3.10 1.15 1.65 2.80 2.10 1.70 2.10 0.15 0.50 0.35 0° 0.70 12° Suggested Pad Layout 0.037 0.95 0.037 0.95 Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm PACKAGE SPECIFICATIONS Package Reel Size Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) SOT-23 7' 180 3000 190×190×190 45000 400×400×220 180000 SOT-23 13' 330 10000 340×350×40 30000 370×370×370 240000 https://www.microdiode.com Rev:2025A4 Page :3