BZT52B12

BZT52B-Series Small Singnal Zener Diodes SOD-123 Plastic-Encapsulate Diodes %=7%9%=7% SOD-123 =(1(5 DIODE 7RWDOSRZHUGLVVLSDWLRQ0D[P:  :LGH]HQHUUHYHUVHYROWDJHUDQJH9WR9  6PDOOSODVWLFSDFNDJHVXLWDEOHIRUVXUIDFH 0.071(1.80) 0.028(0.70) 0.020(0.50) 0.059(1.50) 0.110(2.80) 0.098(2.50) PRXQWHGGHVLJQ 0.010 (0.25) 0.019 (0.475) ref. 0.080 (0.0031) Case : SOD-123 Terminals : Solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.00056 ounce, 0.016 grams 0.018 (0.45) 0.150 (0.0059) 0.008 (0.2 ) Mechanical Data 8° 1.250 (0.049) 7ROHUDQFHDSSUR[LPDWHO\“ 1.050 (0.041) z 0.154 (3.90) 0.142 (3.60) 0° to  0.008(0.20)max. Cathode bar FEATURES Dimensions in inches and (millimeters) Maximum Ratings(Ta=25 ℃ unless otherwise specified) Characteristic Forward Voltage (Note 2) @ IF = 10mA Power Dissipation(Note 1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Symbol Value Unit VF 0.9 V Pd 50 mW RθJA 3 ℃ /W Tj 150 ℃ Tstg -55 ~ +150 ℃ Notes: 1. Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads. 2.. Short duUDtion test pulse used to minimize self-heating effect 3.. f =kHz http://www.microdiode.com Rev:2024A1 Page :1 BZT52B-Series Small Singnal Zener Diodes ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Dynamic Impedance Zener Voltage Range （1） Type Marking V ZT（at I ZT） Min（V） Nom（V） Reverse Current I ZT Z ZT（at I ZT） IR at V R Max（V） (mA) Max (Ω) Max（μA） （V） BZT52B2V0 2WY 1.96 2 2.04 5 100 120 0.5 BZT52B2V2 2WZ 2.16 2.2 2.24 5 100 120 0.7 BZT52B2V4 2WX 2.35 2.4 2.45 5 100 120 1 BZT52B2V7 2W1 2.65 2.7 2.75 5 110 120 1 BZT52B3V0 2W2 2.94 3 3.06 5 120 50 1 BZT52B3V3 2W3 3.23 3.3 3.37 5 130 20 1 BZT52B3V6 2W4 3.53 3.6 3.67 5 130 10 1 BZT52B3V9 2W5 3.82 3.9 3.98 5 130 5 1 BZT52B4V3 2W6 4.21 4.3 4.39 5 130 5 1 BZT52B4V7 2W7 4.61 4.7 4.79 5 130 2 1 BZT52B5V1 2W8 5 5.1 5.20 5 130 2 1.5 BZT52B5V6 2W9 5.49 5.6 5.71 5 80 1 2.5 BZT52B6V2 2WA 6.08 6.2 6.32 5 50 1 3 BZT52B6V8 2WB 6.66 6.8 6.94 5 30 0.5 3.5 BZT52B7V5 2WC 7.35 7.5 7.65 5 30 0.5 4 BZT52B8V2 2WD 8.04 8.2 8.36 5 30 0.5 5 BZT52B9V1 2WE 8.92 9.1 9.28 5 30 0.5 6 BZT52B10 2WF 9.8 10 10.2 5 30 0.1 7 BZT52B11 2WG 10.78 11 11.22 5 30 0.1 8 BZT52B12 2WH 11.76 12 12.24 5 35 0.1 9 BZT52B13 2WI 12.74 13 13.26 5 35 0.1 10 BZT52B15 2WJ 14.7 15 15.3 5 40 0.1 11 BZT52B16 2WK 15.68 16 16.32 5 40 0.1 12 BZT52B18 2WL 17.64 18 18.36 5 45 0.1 13 BZT52B20 2WM 19.6 20 20.4 5 50 0.1 15 BZT52B22 2WN 21.56 22 22.44 5 55 0.1 17 BZT52B24 2WO 23.52 24 24.48 5 60 0.1 19 BZT52B27 2WP 26.46 27 27.54 5 70 0.1 21 BZT52B30 2WQ 29.4 30 30.6 5 80 0.1 23 BZT52B33 2WR 32.34 33 33.66 5 80 0.1 25 BZT52B36 2WS 35.28 36 36.72 5 90 0.1 27 2.5 100 2 30 2.5 130 2 33 BZT52B39 2WT 38.22 39 39.78 BZT52B43 2WU 42.14 43 43.86 BZT52B47 2WV 46.06 47 47.94 2.5 150 2 36 BZT52B51 2WW 49.98 51 52.02 2.5 180 1 39 BZT52B56 2X1 54.88 56 57.12 2.5 180 1 43 BZT52B62 2X2 60.76 62 63.24 2.5 200 0.2 47 BZT52B68 2X3 66.64 68 69.36 2.5 250 0.2 52 BZT52B75 2X4 73.5 75 76.5 2.5 300 0.2 57 （1） V ZT is tested with pulses (20 ms) http://www.microdiode.com Rev:2024A1 Page :2 BZT52B-Series Small Singnal Zener Diodes Typical Characterisitics Ω 100 mA 103 TJ = 25 °C 102 IF 5 4 10 1 3 rzj TJ = 100 °C 33 2 27 22 10 10-1 18 TJ = 25 °C -2 10 15 5 4 10-3 12 3 10 2 10-4 6.8/8.2 6.2 1 10-5 0 0.4 0.2 0.6 0.8 1V VF 18114 0.1 2 1 5 2 5 18119 10 IZ 2 5 100 mA Fig. 4 - Dynamic Resistance vs. Zener Current Fig. 1 - Forward characteristics mW 500 Ω 103 Tj = 25 °C 7 5 4 400 Rzj Ptot 3 2 300 47 + 51 43 39 36 102 7 200 5 4 3 100 2 10 0.1 0 0 100 200 °C Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature 3 4 5 2 3 4 5 IZ Ω 103 TJ = 25 °C 5 4 3 2 1 10 mA Fig. 5 - Dynamic Resistance vs. Zener Current Ω 1000 rzj 2 18120 Tamb 18888 Rzth Rzth = RthA x VZ x 5 4 3 2 Δ VZ ΔTj 102 100 5 4 3 5 4 3 2 2 10 2.7 3.6 4.7 5.1 5 4 3 2 10 5 4 3 negative 2 5.6 1 0.1 2 5 1 18117 2 5 10 2 5 100 mA IZ Fig. 3 - Dynamic Resistance vs. Zener Current http://www.microdiode.com positive 1 1 2 3 4 5 18121 10 2 3 4 5 100 V VZ at IZ = 5 mA Fig. 6 - Thermal Differential Resistance vs. Zener Voltage Rev:2024A1 Page :3 BZT52B-Series Small Singnal Zener Diodes Typical Characterisitics Ω 100 mV/°C 100 IZ = 5 mA 7 5 4 Rzj Δ VZ ΔTj 3 80 2 60 10 7 40 5 4 3 20 2 Tj = 25 °C IZ = 5 mA 1 1 2 3 10 4 5 2 3 4 5 18122 0 0 100 V VZ Fig. 7 - Dynamic Resistance vs. Zener Voltage 60 40 100 V 80 VZ at IZ = 2 mA Fig. 10 - Temperature Dependence of Zener Voltage vs. Zener Voltage mV/°C 25 Δ VZ ΔTj 20 18136 V 9 8 20 15 VZ at IZ = 5 mA 7 5 mA 1 mA IZ = 20 mA ΔVZ 51 6 5 43 4 10 36 3 5 2 1 0 0 -1 0 -5 1 2 3 10 4 5 2 3 4 5 100 V 40 60 80 18158 Tj VZ at IZ = 5 mA V ≥ 27 V, I = 2 mA 18135 Fig. 8 - Temperature Dependence of Zener Voltage vs. Zener Voltage Fig. 11 - Change of Zener Voltage vs. Junction Temperature V 0.8 25 0.7 VZ at IZ = 5 mA V 1.6 15 0.5 1.2 ΔVZ 1.0 8 0.4 0.8 7 0.6 0.2 6.2 5.9 0.4 0.1 5.6 0.3 0 0.2 0 5.1 - 0.2 -1 3.6 - 0.2 0 20 40 60 18124 80 - 0.4 4.7 100 120 140 C 1 1 18159 VZ at IZ = 5 mA Tj Fig. 9 - Change of Zener Voltage vs. Junction Temperature http://www.microdiode.com ΔVZ = rZth x IZ IZ = 5 mA VZ >= 56 V; IZ = 2.5 mA 1.4 10 0.6 Δ VZ IZ = 5 mA 20 2 Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage Rev:2024A1 Page :4 BZT52B-Series Small Singnal Zener Diodes Typical Characterisitics V 5 mA 50 ΔVZ = rzth x IZ 4 Tj = 25 °C 3.9 5.6 2.7 6.8 3.3 4.7 40 lZ Δ VZ 3 8.2 30 IZ = 5 mA 2 20 1 Test current IZ 5 mA 10 IZ = 2.5 mA 0 0 0 20 40 60 80 100 V 0 VZ at IZ = 5 mA 18160 1 2 3 4 18111 Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of Thermal Equilibrium vs. Zener Voltage mA 30 lZ 5 6 7 8 9 10 V VZ Fig. 14 - Breakdown Characteristics 10 12 Tj = 25 °C 15 20 18 22 27 Test 10 current IZ 5 mA 33 36 0 0 18112 10 20 30 40 V VZ Fig. 15 - Breakdown Characteristics 18157 Fig. 16 - Breakdown Characteristics The curve above is for reference only. http://www.microdiode.com Rev:2024A1 Page :5 BZT52B-Series Small Singnal Zener Diodes Packing information P0 unit:mm P1 d Item E F B A W Carrier width Carrier length Carrier depth Sprocket hole 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width P D2 T D1 C W1 D Symbol Tolerance A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 SOD-123 2.1 4.0 1.60 1.55 178.00 50.0 13.00 1.75 3.50 4.00 4.00 2.00 0.25 8.15 10.5 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) CARTON SIZE (m/m) CARTON (pcs) SOD-123 7" 3,000 4.0 45,000 210*208*203 178 430*430*235 180,000 APPROX. GROSS WEIGHT (kg) 9.0 Suggested Pad Layout Symbol A http://www.microdiode.com Unit (mm) Unit (inch) 0.047 B 1.2 1.2 C 3.2 0.126 D 2.0 0.079 E 4.4 0.173 0.047 Rev:2024A1 Page :6