BZT52B-Series
Small Singnal Zener Diodes
SOD-323 Plastic-Encapsulate Diodes
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SOD-323
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0.055(1.40)
0.014(0.35)
0.010(0.25)
0.047(1.20)
0.071(1.80)
0.063(1.60)
PRXQWHGGHVLJQ
0.019 (0.475) ref.
0.080 (0.0031)
0.010 (0.25)
0.150 (0.0059)
Case : SOD-323
Terminals : Solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position : Any
Weight : 0.00019 ounce, 0.00548 grams
0.018 (0.45)
8°
0.008 (0.2 )
Mechanical Data
0.039 (1.00)
7ROHUDQFHDSSUR[LPDWHO\
0.032 (0.80)
0.108 (2.75)
0.100 (2.55)
0° to
0.008(0.20)max.
Cathode bar
FEATURES
Dimensions in inches and (millimeters)
Maximum Ratings(Ta=25 ℃ unless otherwise specified)
Characteristic
Forward Voltage at IF = 10mA
(Note 2)
Symbol
Value
Unit
VF
0.9
V
Pd
30
mW
RθJA
17
Tj
150
℃/W
℃
Tstg
-55 ~ +150
℃
Power Dissipation(Note 1)
Typical thermal resistance from junction to ambient(Note 1)
Junction Temperature
Storage Temperature Range
Notes: 1. Thermal resistance from junction to ambient at P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads.
2.. Short duUDtion test pulse used to minimize self-heating effect
3.. f =kHz
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Rev:2024A1
Page :1
BZT52B-Series
Small Singnal Zener Diodes
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Dynamic
Impedance
Zener Voltage Range (1)
Type
Marking
V ZT(at I ZT)
Min(V)
Nom(V)
Reverse Current
I ZT
Z ZT(at I ZT)
IR
at V R
Max(V)
(mA)
Max (Ω)
Max(μA)
(V)
BZT52B2V0S
20B
1.96
2
2.04
5
100
120
0.5
BZT52B2V2S
20C
2.16
2.2
2.24
5
100
120
0.7
BZT52B2V4S
2C1
2.35
2.4
2.45
5
100
120
1
BZT52B2V7S
2D1
2.65
2.7
2.75
5
110
120
1
BZT52B3V0S
2E1
2.94
3
3.06
5
120
50
1
BZT52B3V3S
2F1
3.23
3.3
3.37
5
130
20
1
BZT52B3V6S
2H1
3.53
3.6
3.67
5
130
10
1
BZT52B3V9S
2J1
3.82
3.9
3.98
5
130
5
1
BZT52B4V3S
2K1
4.21
4.3
4.39
5
130
5
1
BZT52B4V7S
2M1
4.61
4.7
4.79
5
130
2
1
BZT52B5V1S
2N1
5
5.1
5.20
5
130
2
1.5
BZT52B5V6S
2P1
5.49
5.6
5.71
5
80
1
2.5
BZT52B6V2S
2R1
6.08
6.2
6.32
5
50
1
3
BZT52B6V8S
2X1
6.66
6.8
6.94
5
30
0.5
3.5
BZT52B7V5S
2Y1
7.35
7.5
7.65
5
30
0.5
4
BZT52B8V2S
2Z1
8.04
8.2
8.36
5
30
0.5
5
BZT52B9V1S
2A2
8.92
9.1
9.28
5
30
0.5
6
BZT52B10S
2B2
9.8
10
10.2
5
30
0.1
7
BZT52B11S
2C2
10.78
11
11.22
5
30
0.1
8
BZT52B12S
2D2
11.76
12
12.24
5
35
0.1
9
BZT52B13S
2E2
12.74
13
13.26
5
35
0.1
10
BZT52B15S
2F2
14.7
15
15.3
5
40
0.1
11
BZT52B16S
2H2
15.68
16
16.32
5
40
0.1
12
BZT52B18S
2J2
17.64
18
18.36
5
45
0.1
13
BZT52B20S
2K2
19.6
20
20.4
5
50
0.1
15
BZT52B22S
2M2
21.56
22
22.44
5
55
0.1
17
BZT52B24S
2N2
23.52
24
24.48
5
60
0.1
19
BZT52B27S
2P2
26.46
27
27.54
2
70
0.1
21
BZT52B30S
2R2
29.4
30
30.6
2
80
0.1
23
BZT52B33S
2X2
32.34
33
33.66
2
80
0.1
25
BZT52B36S
2Y2
35.28
36
36.72
2
90
0.1
27
2
100
0.1
30
2
130
0.1
33
BZT52B39S
2Z2
38.22
39
39.78
BZT52B43S
2A3
42.14
43
43.86
BZT52B47S
2B3
46.06
47
47.94
2
150
0.1
36
BZT52B51S
2C3
49.98
51
52.02
2
180
0.1
39
BZT52B56S
2D3
54.88
56
57.12
2
200
0.1
43
BZT52B62S
2E3
60.76
62
63.24
2
215
0.1
47
BZT52B68S
2F3
66.64
68
69.36
2
240
0.1
52
BZT52B75S
2H3
73.5
75
76.5
2
265
0.1
56
(1) V ZT is tested with pulses (20 ms)
http://www.microdiode.com
Rev:2024A1
Page :2
BZT52B-Series
Small Singnal Zener Diodes
Typical Characterisitics
mA
103
mW
500
102
IF
400
10
Ptot
TJ = 100 °C
1
300
10-1
TJ = 25 °C
200
10-2
10-3
100
10-4
10-5
0
0.2
0.4
0.6
0.8
0
1V
0
100
VF
Fig. 1 - Forward characteristics
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Ω
100
Ω
1000
TJ = 25 °C
TJ = 25 °C
5
4
3
2
rzj
200 °C
Tamb
5
4
3
rzj
100
5
4
3
33
2
27
22
10
18
2
10
12
3
10
2
2
6.8/8.2
5.6
1
0.1
2
5
1
2
5
10
2
5
100 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
0.1
1
5
2
Ω
103
Tj = 25 °C
7
5
4
2
2
Rzth
47 + 51
43
39
36
10
IZ
2
5
100 mA
Rzth = RthA x VZ x
5
4
3
2
Δ VZ
ΔTj
102
5
4
3
102
2
7
5
4
3
10
5
4
3
2
negative
2
10
0.1
5
Fig. 4 - Dynamic Resistance vs. Zener Current
Ω
103
3
6.2
1
IZ
Rzj
15
5
4
2.7
3.6
4.7
5.1
5
4
3
positive
1
2
3
4 5
1
2
IZ
3 4 5
10
mA
Fig. 5 - Dynamic Resistance vs. Zener Current
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1
2
3
4 5
10
2
3 4 5
100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev:2024A1
Page :3
BZT52B-Series
Small Singnal Zener Diodes
Typical Characterisitics
Ω
100
mV/°C
25
7
5
4
Rzj
Δ VZ
ΔTj
3
20
2
15
10
10
IZ =
5 mA
1 mA
20 mA
7
5
5
4
3
0
2
Tj = 25 °C
IZ = 5 mA
1
1
2
3
10
4 5
2
3 4 5
-5
1
100 V
2
3
4 5
Fig. 7 - Dynamic Resistance vs. Zener Voltage
100 V
3 4 5
V
9
25
0.7
15
VZ at IZ = 5 mA
8
10
0.6
8
43
4
0.2
6.2
5.9
3
0.1
5.6
2
0
51
6
5
7
0.3
VZ at IZ = 2 mA
7
Δ VZ
0.5
0.4
36
1
5.1
0
-1
4.7
3.6
- 0.2
0
20
40
60
80
IZ = 2 mA
-1
0
100 120 140 C
20
40
60
80 100 120
140 °C
Tj
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Fig. 10 - Change of Zener Voltage vs. Junction Temperature
mV/°C
100
V
1.6
IZ = 5 mA
Δ VZ
ΔTj
2
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
0.8
Δ VZ
10
VZ at IZ = 5 mA
V ≥ 27 V, I = 2 mA
VZ
Δ VZ = rzth x IZ
IZ = 5 mA
VZ ≥ 27 V; IZ = 2 mA
1.4
1.2
80
Δ VZ
1
0.8
60
0.6
0.4
40
0.2
0
20
- 0.2
- 0.4
0
0
20
60
40
80
100 V
1
2
3
4 5
Fig. 11 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
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10
2
3 4 5
100 V
VZ at IZ = 5 mA
VZ at IZ = 2 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Rev:2024A1
Page :4
BZT52B-Series
Small Singnal Zener Diodes
Typical Characterisitics
V
5
mA
50
ΔVZ = rzth x IZ
4
Tj = 25 °C
3.9 5.6
2.7
6.8
3.3 4.7
40
lZ
Δ VZ
3
8.2
30
IZ = 5 mA
2
20
1
Test
current
IZ 5 mA
10
IZ = 2.5 mA
0
0
0
20
40
60
80
100 V
0
1
2
3
4
VZ at IZ = 5 mA
5
6
7
8
9 10 V
VZ
Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
mA
30
lZ
Fig. 14 - Breakdown Characteristics
10
12
Tj = 25 °C
15
20
18
22
27
Test
10 current
IZ 5 mA
33 36
0
0
10
20
30
40 V
VZ
Fig. 15 - Breakdown Characteristics
Test Current IZ
2 mA
Fig. 16 - Breakdown Characteristics
The curve above is for reference only.
http://www.microdiode.com
Rev:2024A1
Page :5
BZT52B-Series
Small Singnal Zener Diodes
Packing information
P0
unit:mm
P1
d
Item
E
F
B
A
W
Carrier width
Carrier length
Carrier depth
Sprocket hole
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
P
D2
T
D1
C
W1
D
Symbol
Tolerance
A
B
C
d
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.05
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
SOD-323
2.1
4.0
1.60
1.55
178.00
50.0
13.00
1.75
3.50
4.00
4.00
2.00
0.25
8.15
10.5
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
Reel packing
PACKAGE
REEL SIZE
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
CARTON
(pcs)
SOD-323
7"
3,000
4.0
45,000
210*208*203
178
430*430*235
180,000
APPROX.
GROSS WEIGHT
(kg)
Suggested Pad Layout
Symbol
Unit (mm)
Unit (inch)
A
0.7
0.7
0.028
B
http://www.microdiode.com
0.028
2.5
0.085
D
1.8
0.071
E
3.2
0.112
C
Rev:2024A1
Page :6
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