D882-GR

D882 SOT-89-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) SOT-89-3L FEATURES z Power dissipation 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 3. EMITTER Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A PC Collector Power Dissipation 0.5 W Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Test conditions Symbol ol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current ICBO VCB=40V, IE=0 1 μA Collector cut-off current ICEO VCE=30V, IB=0 10 μA Emitter cut-off current IEBO VEB=6V, IC=0 1 μA hFE(1) VCE=2V, IB=0.2A 30 150 hFE(2) VCE=2V, IC=1A 60 160 400 Collector-emitter saturation voltage VCE(sat) IC=2A, IB=0.2A 0.3 0.5 V Base-emitter saturation voltage VBE(sat) IC=2A, IB=0.2A 1 1.5 V DC current gain fT Transition frequency Cob TCollector output capacitance 50 VCE=5V, IC=0.1A f=10MHz MHz 45 VCB=10V, IE=0 , f=1MHz pF CLASSIFICATION OF hFE (1) Rank Range http://www.microdiode.com R 60-120 O Y GR 100-200 160-320 200-400 Rev:2024A1 Page :1 D882 Typical Characteristics Static Characteristic 2.00 10mA 9mA 1.75 8mA IC 5mA 1.25 COLLECTOR CURRENT —— IC Ta=100℃ hFE 6mA DC CURRENT GAIN (A) 7mA 1.50 4mA 1.00 3mA 0.75 Ta=25℃ 100 2mA 0.50 0.25 COMMON EMITTER VCE= 2V IB=1mA 0.00 10 0 1 2 3 6 —— 1 10 100 COLLECTOR CURRENT IC VBEsat —— 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 1000 7 VCE (V) COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) hFE 1000 COMMON EMITTER Ta=25 ℃ 100 Ta=100 ℃ 10 Ta=25℃ 1000 IC IC 1000 Ta=25℃ Ta=100 ℃ β=10 1 β=10 100 1 10 100 COLLECTOR CURREMT IC 3000 —— 1000 IC 1 3000 10 100 COLLECTOR CURREMT (mA) Cob/Cib VBE —— 1000 IC VCB/VEB 500 f=1MHz IE=0/IC=0 Cib (pF) (mA) Ta=25 ℃ C IC T= a 25 ℃ 100 CAPACITANCE 100 T= a 10 0℃ COLLECTOR CURRENT 3000 (mA) 1000 10 COMMON EMITTER VCE= 2V 1 0 300 600 900 1200 PC 600 —— Cob 10 0.1 1 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) COLLECTOR POWER DISSIPATION PC (mW) 3000 (mA) 10 V 20 (V) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) The curve above is for reference only. http://www.microdiode.com Rev:2024A1 Page :2 D882 SOT-89-3L Outlitne Drawing SOT-89-3L Package Outline Dimensions Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. http://www.microdiode.com Rev:2024A1 Page :3 D882 SOT- 89-3L Tape and Reel Packaging Description: SOT-89-3L parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film,adhesive laye,sealant, and anti-static sprayed agent.These reeled parts In standard option are shipped with 1,000 units per 7" or 18cm diameter reel. The reels are clear in color and is made of polystyrene plastic (anti-static coated). 1000 pcs http://www.microdiode.com 7 Inch 10,000 pcs 203×203×195 40,000 pcs 438×438×220 Rev:2024A1 Page :4