ESD3B3CM

ESD3B3CM Low Capacitance Bidirectional TVS/ESD Protection Diode SOD-323 Plastic-Encapsulate ESD Protection Diodes DESCRIPTION The ESD3B3CM is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power supplies and many other portable applications where board space comes at a premium. Also because of its low capacitance, it is suited for use in high frequency designs such as high speed line applications. This device has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge), and EFT (electrical fast transients). Features Pin Configuration  Peak power dissipation: 500W (8/20μs)         IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 40A (5/50ns) Protects one Vcc or data line Low clamping voltage Low leakage current Low capacitance Working voltages : 3.3V Meets MSL 1 Requirements Applications         Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation Networking and Telecom Serial and Parallel Ports Peripherals Circuit Diagram 1 2 Mechanical Characteristics  Package: SOD-323  Flammability Rating: UL 94V-0  High temperature soldering guaranteed: 260℃/10s  Packaging: Tape and Reel  Marking: 2A Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit VESD ± 30 ± 30 KV Peak Pulse Power(8/20us ) PPP 500 W Operating Temperature TOPT −55 to +150 °C Storage Temperature TSTG −55 to +150 °C ESD per IEC 61000−4−2 (Air) ESD per IEC 61000−4−2 (Contact) The above data are for reference only. http://www.microdiode.com Rev:2024A1 Page :1 ESD3B3CM Low Capacitance Bidirectional TVS/ESD Protection Diode Electrical Characteristics (TA=25°C unless otherwise specified) Test Condition Symbol Parameter VRWM Reverse Working Voltage VBR Reverse Breakdown Voltage IR Reverse Leakage Current VC Clamping Voltage IPP = 1A, tp = 8/20μs VC Clamping Voltage IPP = 28A, tp = 8/20μs CJ Junction Capacitance VR = 0V, f = 1MHz IT = 1mA Min Typ Max Units 3.3 V 6.0 V 1.0 μA 6.5 V 13 18 V 30 45 pF 4.0 VRWM = 3.3V The above data are for reference only. http://www.microdiode.com Rev:2024A1 Page :2 ESD3B3CM Low Capacitance Bidirectional TVS/ESD Protection Diode ELECTRICAL CHARACTERISTICS CURVE The curve above is for reference only. http://www.microdiode.com Rev:2024A1 Page :3 ESD3B3CM Low Capacitance Bidirectional TVS/ESD Protection Diode Outlitne Drawing SOD-323 Package Outline Dimensions Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. PACKAGE SPECIFICATIONS Package Reel Size SOD-323 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 178 3000 183×188×80 45,000 386×265×215 180,000 7' http://www.microdiode.com Rev:2024A1 Page :4