MMBTA42

MMBTA42 SOT-23 Plastic-Encapsulate Transistor MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)    1. BASE 2. EMITTER 3. COLLECTOR Marking: 1D PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) Carton Size (mm) Q'TY/Carton (pcs) 330 3000 203×203×195 45000 438×438×220 180000 7' MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 0.3 A PC* Collector Power Dissipation 350 mW RӨJA Thermal Resistance, junction to Ambient 357 ℃/mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions MIN UNIT Collector-base breakdown voltage V(BR)CBO IC= 100μA, Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 0 Collector cut-off current ICBO VCB=200V, IE=0 0.25 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE(1) VCE= 10V, IC= 1mA 60 hFE(2) VCE= 10V, IC=10mA 10mA 100 hFE(3) VCE=10V, IC=30mA 0m 60 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V DC current gain Transition frequency fT IE=0 MAX VCE= 20V, IC= 10mA, f=30MHz 300 V 300 V 5 V 50 200 MHz The above data are for reference only. https://www.microdiode.com Rev:2024A2 Page :1 MMBTA42 Typical Characteristics IC 18 VCE —— —— IC COMMON EMITTER Ta=25℃ hFE 80uA 70uA DC CURRENT GAIN (mA) 12 COLLECTOR CURRENT 14 IC 16 hFE 1000 90uA 60uA 50uA 10 40uA 8 30uA 6 Ta=100℃ Ta=25℃ 100 20uA 4 IB=10uA COMMON EMITTER VCE=10V 2 10 0.1 0 0 2 4 10 12 14 16 COLLECTOR-EMITTER VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 20 22 IC 10 VBEsat —— 900 Ta=100 ℃ 100 1 COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) VCEsat 500 18 VCE (V) Ta=25℃ 100 IC (mA) IC Ta=25℃ 600 Ta=100 ℃ β=10 β=10 10 0.1 1 10 COLLECTOR CURREMT IC 100 —— IC 1 fT VBE —— IC 100 (mA) IC (MHz) 300 fT 1 300 600 900 COMMON EMITTER VCE=20V Ta=25℃ 0.1 0 100 TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a 10 COMMON EMITTER VCE=10V 10 0.1 1200 1 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ (pF) C 10 Cob 1 0.1 1 REVERSE VOLTAGE 10 V (V) PC 400 f=1MHz IE=0/IC=0 Cib 10 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) CAPACITANCE 10 COLLECTOR CURREMT (mA) (mA) IC COLLECTOR CURRENT 300 0.1 100 20 —— IC 100 (mA) Ta 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) The curve above is for reference only. https://www.microdiode.com Rev:2024A2 Page :2 MMBTA42 Outlitne Drawing SOT-23 Package Outline Dimensions L L1 E E1 θ 1 e Symbol A A1 b c D E E1 E1 e L L1 θ Dimensions In Millimeters Min Typ Max 1.00 1.40 0.10 0.35 0.50 0.10 0.20 2.70 2.90 3.10 1.20 1.60 2.4 2.80 1.90 0.10 0.30 0.4 0° 10° Suggested Pad Layout 0.037 0.95 0.037 0.95 Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 https://www.microdiode.com inches mm Rev:2024A2 Page :3