RABS210

RABS210

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    ABS

  • 描述:

    耐压:1000V 电流:2A

  • 数据手册
  • 价格&库存
RABS210 数据手册
RABS21 THRU RABS210 Voltage Range - 100 to 1000 Volts Current - 2.0 Ampere GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIERS Features ABS  Glass Passivated Chip Junction  Reverse Voltage - 100 to 1000 V  Forward Current- 2.0 A  Fast reverse recovery time  Designed for Surface Mount Application Mechanical Data (1) (2) - Case: JEDEC ABS molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Polarity symbol marking on body Mounting Position: Any Weight : 0.0031 ounce, 0.088 grams + ~ ~ (3) (4) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Symbols Marking Code MDD RABS21 MDD RABS22 MDD RABS24 MDD RABS26 MDD RABS28 MDD Units RABS210 Maximum Repetitive Peak Reverse Voltage V RRM 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 100 200 400 600 800 1000 V Average Rectified Output Current at T c = 115 °C IO 2.0 A I FSM 50 A VF 1.3 V IR 5.0 200 μA Typical Junction Capacitance (Note 1) Cj 40 pF Typical Thermal Resistance(Note2) RθJA 50 °C/W t rr 500 ns T j , T stg -55 ~ +150 °C Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 2.0 A Maximum DC Reverse Current @ T a =25 °C at Rated DC Blocking Voltage @ T a =125 °C Maximum Reverse Recovery Time (Note3) Operating and Storage Temperature Range Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with4×1.5"×1.5"(3.81×3.81 cm)copper pad areas. 3. Measured with I = 0.5 A, I = 1 A, Irr = 0.25 A . http://www.microdiode.com Rev:2024A1 Page :1 RABS21 THRU RABS210 Voltage Range - 100 to 1000 Volts Current - 2.0 Ampere Typical Characterisitics Fig.2 Typical Reverse Characteristics 2.5 2.0 1.5 1.0 0.5 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current(μ A) Average Rectified Output Current (A) Fig.1 Average Rectified Output Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 CaseTemperature (°C) 1.0 0.1 pulse with 300μs 1% duty cycle Junction Capacitance (pF) Instaneous Forward Current (A) 60 80 100 120 100 T J =25°C 10 1 0.5 1.0 1.5 2.0 2.5 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 60 50 40 30 20 10 140 Fig.4 Typical Junction Capacitance T J =25°C 0.01 0.0 40 percent of Rated Peak Reverse Voltage (%) Fig.3 Typical Instaneous Forward Characteristics 10 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2024A1 Page :2 RABS21 THRU RABS210 Voltage Range - 100 to 1000 Volts Current - 2.0 Ampere Suggested Pad Layout Q1 P1 Dim Min P1 5.72 P2 4.00 Q1 1.00 Q2 0.90 Q2 P2 Dimensions in millimeters http://www.microdiode.com Rev:2024A1 Page :3
RABS210 价格&库存

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