RMSB40M

RMSB40B THRU RMSB40M Voltage Range - 100 to 1000 Volts Current - 4.0 Ampere GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIERS Features UMSB  Glass Passivated Chip Junction  Reverse Voltage - 100 to 1000 V .276(7.00) .244(6.20) .045(1.15) .037(0.95) (1) .350(8.90) .331(8.40) .299(7.60) .280(7.10) .055(1.6) .0315(1.0) (2)  Forward Current- 4.0 A  Fast reverse recovery time  Designed for Surface Mount Application .209(5.30) .193(4.90) (3) Mechanical Data Top Viev (4) Bottom View （1） （2） - .114(2.90) + .012(0.29) .070(0.17) .122(3.10) .003(0.08) .002(0.04) .059(1.5) .051(1.3) Case: JEDEC UMSB molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026  Polarity: Polarity symbol marking on body Mounting Position: Any Weight : 0.00825 ounce, 0.234 grams ~ ~ （3） （4） Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Symbols Marking Code MDD MDD MDD MDD MDD MDD Units RMSB40B RMSB40D RMSB40G RMSB40J RMSB40K RMSB40M Maximum Repetitive Peak Reverse Voltage V RRM 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 100 200 400 600 800 1000 V I F(AV) 4 A I FSM 95 A VF 1.3 V IR 5.0 200 μA Typical Junction Capacitance (Note 1) Cj 50 pF Typical Thermal Resistance（Note2） RθJA RθJC RθJL 60 15 25 °C/W Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 4.0 A Maximum DC Reverse Current @ T a =25 °C at Rated DC Blocking Voltage @ T a =125 °C Maximum Reverse Recovery Time （Note3） Operating and Storage Temperature Range t rr 150 T j , T stg 250 -55 ~ +150 500 ns °C Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. Mounted on glass epoxy PC board with4×1.5"×1.5"（3.81×3.81 cm）copper pad areas. 3. Measured with I = 0.5 A, I = 1 A, Irr = 0.25 A . http://www.microdiode.com Rev:2025A2 Page :1 RMSB40B THRU RMSB40M Voltage Range - 100 to 1000 Volts Current - 4.0 Ampere Typical Characterisitics Average Rectified Output Current (A) 5.0 4.0 3.0 2.0 1.0 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Fig.2 Typical Reverse Characteristics Fig.1 Average Rectified Output Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 100 120 140 T J =25°C 10 1 0.5 1.0 1.5 2.0 2.5 0.1 1.0 95 76 57 38 8.3 ms Single Half Sine Wave (JEDEC Method) 00 10 Number of Cycles 100 Transient Thermal Impedance（ °C /W） 114 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A) 80 100 Instaneous Forward Voltage (V) 19 60 Fig.4 Typical Junction Capacitance Junction Capacitance (pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 0.01 0.0 40 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) 10 20 Fig.6- Typical Transient Thermal Impedance 100 10 1 0.01 0.1 1 10 t, Pulse Duration（sec） The curve above is for reference only. http://www.microdiode.com Rev:2025A2 Page :2 100 RMSB40B THRU RMSB40M Voltage Range - 100 to 1000 Volts Current - 4.0 Ampere Suggested Pad Layout Q1 1.0×1.4 39×55 P1 Q2 Dim Min P1 5.1 P2 7.1 Q1 1.8 Q2 1.3 P2 Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2025A2 Page :3