TT6KF THRU TT6MF
Voltage Range - 800 to 1000 Volts
Current - 6.0 Ampere
GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIERS
Features
TTF
2
.209(5.30)
.193(4.90)
1
-
+
~
~
.346(8.80)
.330(8.40)
Forward Current- 6.0 A
High Surge Current Capability
Designed for Surface Mount Application
.385(9.80)
.370(9.40)
.0490(1.25)
.0330(0.85)
Glass Passivated Chip Junction
Reverse Voltage - 800 to 1000 V
Mechanical Data
Case: JEDEC TTF molded plastic body
Terminals: Solderable per MIL-STD-750,Method 2026
Polarity: Polarity symbol marking on body Mounting
Position: Any
Weight : 0.0163 ounce, 0.461 grams
.0216(0.55)
.0098(0.25)
10°
Top Viev
4
Bottom View
.061(1.55)
.049(1.25)
∠ALL ROUND
.401(10.20)
.385(9.80)
.068(1.75)
.053(1.35)
3
(1)
(2)
-
VM
A
+
~
~
(3)
(4)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
Symbols
Marking Code
TT6KF
MDD
MDD
TT6MF
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
800
1000
V
Maximum RMS voltage
V RMS
560
700
V
Maximum DC Blocking Voltage
V DC
800
1000
V
Maximum Average Forward Rectified Current
IO
6
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
I FSM
200
A
2
I2t Rating for Fusing
I t
166
A2S
Maximum Forward Voltage at 1.0 A
VF
0.83
typ.
V
Maximum Forward Voltage at 6.0 A
VF
1.0
V
IR
5
100
μA
Typical Junction Capacitance (Note1)
Cj
60
pF
Typical Thermal Resistance(Note2)
RθJA
RθJC
RθJL
60
10
12
°C/W
T j , T stg
-55 ~ +150
°C
Maximum DC Reverse Current
@ T a =25 °C
at Rated DC Blocking Voltage
@ T a =125 °C
Operating and Storage Temperature Range
Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. P.C.B. mounted with 4×1.5"×1.5"(3.81×3.81 cm)copper pad areas.
http://www.microdiode.com
Rev:2024A1
Page :1
TT6KF THRU TT6MF
Voltage Range - 800 to 1000 Volts
Current - 6.0 Ampere
Typical Characterisitics
Fig.2 Typical Reverse Characteristics
7.0
6.0
5.0
4.0
3.0
2.0
1.0
Resistive or Inductive Load
0.0
25
50
75
100
125
150
175
Instaneous Reverse Current(μ A)
Average Rectified Output Current (A)
Fig.1 Average Rectified Output Current
Derating Curve
100
T J =125°C
10
1.0
T J =25°C
0.1
Case Temperature (°C)
0.1
pulse with 300μs
1% duty cycle
1.0
1.5
Junction Capacitance (pF)
Instaneous Forward Current (A)
1.0
0.5
180
150
120
90
60
8.3 ms Single Half Sine Wave
(JEDEC Method)
Number of Cycles at 60Hz
100
Transient Thermal Impedance( °C /W)
Peak Forward Surage Current (A)
240
10
100
120
140
T J =25°C
10
0.1
1.0
10
100
Reverse Voltage (V)
210
1
80
100
1
2.0
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
00
60
200
Instaneous Forward Voltage (V)
30
40
Fig.4 Typical Junction Capacitance
T J =25°C
0.01
0.0
20
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
10
00
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1
1
10
100
t, Pulse Duration(sec)
The curve above is for reference only.
http://www.microdiode.com
Rev:2024A1
Page :2
TT6KF THRU TT6MF
Voltage Range - 800 to 1000 Volts
Current - 6.0 Ampere
Suggested Pad Layout
5.1
201
1.8×2.1
71×83
8.7
343
http://www.microdiode.com
Note:
1.Controlling dimension:in/millimeters.
2.General tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
Unit: m m
( mi l)
Rev:2024A1
Page :3
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