TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
650V Super-Junction Power MOSFET
FEATURES
Very low FOM RDS(on)×Qg
100% avalanche tested
RoHS compliant
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
Device Marking and Package Information
Device
TPA65R280D
TPB65R280D
TPC65R280D
TPD65R280D
TPP65R280D
TPU65R280D
Package
TO-220F
TO-263
TO-262
TO-252
TO-220
TO-251
Marking
65R280D
65R280D
65R280AD
65R280AD
65R280AD
65R280AD
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Value
Parameter
Symbol
TO-220F
Drain-Source Voltage (VGS = 0V)
Continuous Drain Current
Pulsed Drain Current
(note1)
Gate-Source Voltage
TO-220, TO-251, TO-252
TO-262, TO-263
Unit
VDSS
650
V
ID
15
A
IDM
45
A
VGSS
±30
V
Single Pulse Avalanche Energy
(note2)
EAS
290
mJ
Avalanche Current
(note1)
IAS
2.4
A
MOSFET dv/dt ruggedness, VDS = 0...480V
dv/dt
50
V/ns
Reverse diode dv/dt, VDS = 0…480V, ISD ≤ ID
dv/dt
15
V/ns
Power Dissipation (TC = 25ºC)
PD
Operating Junction and Storage Temperature Range
32
104
TJ, Tstg
-55~+150
Symbol
Value
TO-220, TO-251, TO-252
TO-262, TO-263
W
ºC
Thermal Resistance
Parameter
TO-220F
Thermal Resistance, Junction-to-Case
RthJC
3.9
1.2
Thermal Resistance, Junction-to-Ambient
RthJA
80
62
Unit
ºC/W
V3.2
1
www.tsinghuaicwx.com
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
Specifications TJ = 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
VGS = 0V, ID = 250µA
650
--
--
VDS = 650V, VGS = 0V, TJ = 25ºC
--
--
1
VDS = 650V, VGS = 0V, TJ = 150ºC
--
--
100
IGSS
VGS = ±30V
--
--
±100
nA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
2.5
--
4.0
V
Drain-Source On-Resistance (Note3)
RDS(on)
VGS = 10V, ID = 7.5A
--
0.23
0.28
Ω
gfs
VDS = 10V, ID = 7.5A
--
10
--
S
--
1250
--
--
81
--
Static
Drain-Source Breakdown Voltage
V(BR)DSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage
Forward Transconductance
(Note3)
V
μA
Dynamic
Input Capacitance
Ciss
VGS = 0V,
VDS = 50V,
f = 1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
--
7.1
--
Total Gate Charge
Qg
--
30
--
Gate-Source Charge
Qgs
--
9
--
Gate-Drain Charge
Qgd
--
10
--
Turn-on Delay Time
td(on)
--
42
--
Turn-on Rise Time
tr
--
17
--
Turn-off Delay Time
td(off)
--
135
--
--
6
--
--
--
15
--
--
45
--
0.9
1.2
V
--
335
--
ns
--
3.4
--
μC
--
20
--
A
Turn-off Fall Time
VDD = 520V, ID = 15A,
VGS = 10V
VDD = 400V, ID = 15A,
RG = 25Ω
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
IS
TC = 25ºC
Pulsed Diode Forward Current
ISM
Body Diode Voltage
VSD
Reverse Recovery Time
TJ = 25ºC, ISD = 15A, VGS = 0V
trr
Reverse Recovery Charge
Qrr
Peak Reverse Recovery Current
Irrm
VR = 480V, IF = IS,
diF/dt = 100A/μs
A
Notes
1.
Repetitive Rating: Pulse Width limited by maximum junction temperature
2.
IAS = 2.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1%
V3.2
2
www.tsinghuaicwx.com
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
50
40
ID, Drain Current (A)
40
35
30
25
ID, Drain Current (A)
20V
10V
8V
7V
6V
5V
45
20
15
10
30
25
20
TJ = 150ºC
15
10
5
5
0
0
0
5
10
15
20
0
2
VDS, Drain-to-Source Voltage (V)
8
10
104
VGS = 10V
TJ = 25ºC
0.27
Capacitance (pF)
RDS(on), On-Resistance (Ω)
6
Figure 4. Capacitance
0.29
0.25
0.23
Ciss
103
Coss
102
Crss
101
0.21
VGS = 0
f = 1MHz
0.19
1
4
7
10
13
16
100
19
0
ID, Drain Current (A)
20
40
60
VDS, Drain-to-Source Voltage (V)
Figure 5. Gate Charge
Figure 6. Body Diode Forward Voltage
12
102
Is, Source Current (A)
VGS, Gate-to-Source Voltage (V)
4
VGS, Gate-to-Source Voltage (V)
Figure 3. On-Resistance vs. Drain Current
10
VDD = 120V
8
VDD = 520V
6
4
2
TJ = 150ºC
101
TJ = 25ºC
100
10-1
10-2
10-3
0
0
10
20
30
0.2
40
Qg, Total Gate Charge (nC)
V3.2
TJ = 25ºC
VDS = 10V
35
0.4
0.6
0.8
1
1.2
1.4
VSD, Source-to-Drain Voltage (V)
3
www.tsinghuaicwx.com
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
Typical Characteristics TJ = 25ºC, unless otherwise noted
Figure 7. On-Resistance vs.
Junction Temperature
VGS = 10V
ID = 7.5A
2.5
ID = 250µA
0.4
VGS(th), (Variance)
RDS(on), (Normalized)
3
Figure 8. Threshold Voltage vs.
Junction Temperature
2
1.5
1
0
-0.4
-0.8
0.5
0
-100
-50
0
50
100
150
-1.2
-100
200
TJ, Junction Temperature (ºC)
100
150
200
101
ZthJC, Thermal Impedance (K/W)
ZthJC, Thermal Impedance (K/W)
50
Figure 10. Transient Thermal Impedance
TO-220F
101
100
10-1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10-2
10-3
10-4
10-7
10-6
10-5
10-4
10-3
10-2
100
10-1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10-2
10-3
10-1
10-7
Tp, Pulse Width (s)
TO-220,TO-251,TO-252,TO-262,TO-263
101
TO-220F
102
ID, Drain Current(A)
101
100
tp = 10us
tp = 100us
tp = 1ms
tp = 10ms
DC
101
100
10-1
tp = 10us
tp = 100us
tp = 1ms
tp = 10ms
DC
10-2
10-2
100
10-3 10-2 10-1 100
Figure 12. Safe operation area for
102
10-1
10-6 10-5 10-4
Tp, Pulse Width (s)
Figure 11. Safe operation area for
ID, Drain Current(A)
0
TJ, Junction Temperature (ºC)
Figure 9. Transient Thermal Impedance
TO-220,TO-251,TO-252,TO-262,TO-263
101
102
100
103
101
102
103
VDS, Drain-Source Voltage(V)
VDS, Drain-Source Voltage(V)
V3.2
-50
4
www.tsinghuaicwx.com
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
Figure A：Gate Charge Test Circuit and Waveform
Figure B：Resistive Switching Test Circuit and Waveform
Figure C：Unclamped Inductive Switching Test Circuit and Waveform
V3.2
5
www.tsinghuaicwx.com
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
TO-220
V3.2
6
www.tsinghuaicwx.com
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
TO-220F
V3.2
7
www.tsinghuaicwx.com
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
TO-251
V3.2
8
www.tsinghuaicwx.com
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
TO-252
V3.2
9
www.tsinghuaicwx.com
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
TO-262
V3.2
10
www.tsinghuaicwx.com
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
TO-263
V3.2
11
www.tsinghuaicwx.com
TPA65R280D, TPB65R280D, TPC65R280D, TPD65R280D, TPP65R280D, TPU65R280D
Wuxi Unigroup Microelectronics Company
Disclaimer
All product specifications and data are subject to change without notice.
For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume
any legal liability or responsibility for the accuracy, completeness of any product or technology
disclosed hereunder.
No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted
by this document or by any conduct of Wuxi Unigroup.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining
applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in
such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any
damages arising or resulting from such use or sale.
Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product
described herein or of any information provided herein to the maximum extent permitted by law. The
product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of
purchase, including but not limited to the warranty expressed therein, which apply to these products.
Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products.
However, any and all semiconductor products fail with some probability. It is possible that these
probabilistic failures could give rise to accidents or events that could endanger human lives that could
give rise to smoke or fire, or that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant
design, and structural design.
In the event that any or all Wuxi Unigroup products (including technical data, services) described or
contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
Information (including circuit diagrams and circuit parameters) herein is for example only. It is not
guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable,
but no guarantees are made or implied regarding its use or any infringements of intellectual property
rights or other rights of third parties.
V3.2
12
www.tsinghuaicwx.com
