F1M

www.msksemi.com F1A THRU F1M Semiconductor Compiance FEATURES 2 * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Fast switching speed 1 MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Metallurgically bonded construction * Polarity: Color band denotes cathode end * Mounting position: Any SOD-123FL MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 C ambient temperature uniess otherwies specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current F1A F1B F1D F1G F1J F1K F1M UNITS 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V at Ta=25 C Peak Forward Surge Current, 8.3 ms single half sine-wave 1.0 A superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 1.0A Maximum DC Reverse Current Ta=25 C 30 1.3 5.0 A V A at Rated DC Blocking Voltage Ta=100 C Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance RqJA (Note 3) Operating and Storage Temperature Range TJ, TSTG 100 250 150 15 80 -65 +150 500 A nS pF C/W C Marking Code NOTES: 1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3. Thermal Resistance from Junction to Ambient. www.msksemi.com F1A THRU F1M Semiconductor FIG.1-TYPICAL FORWARD Compiance FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 3.0 1.0 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 0 20 40 Tj=25 C 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) Pulse Width 300us 1% Duty Cycle 0.1 .01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) PEAK FORWAARD SURGE CURRENT,(A) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 Sine Wave 20 JEDEC method 10 0 1 5 2. Rise Time= 10ns max., Source Impedance= 50 ohms. | | | | | | | | 0 -0.25A 100 FIG.5-TYPICAL JUNCTION CAPACITANCE NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. +0.5A 50 10 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) trr 8.3ms Single Half Tj=25 C (+) 1W NONINDUCTIVE 35 JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) 50 30 25 20 15 10 5 0 -1.0A 1cm SET TIME BASE FOR .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) 50 / 10ns / cm www.msksemi.com F1A THRU F1M Semiconductor Compiance 1.8± 0.3 0.95 ±0.25 PACKAGE MECHANICAL DATA 1.15±0.25 0.05-0.30 2.75 ±0.25 0.6±0.3 3.7 ±0.30 Dimensions in millimeters 1.4 2.85 1.2 REEL SPECIFICATION P/N F1A THRU F1M PKG SOD-123FL QTY 3000 www.msksemi.com F1A THRU F1M Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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