AO3400A

AO3400A N-Channel 30-V(D-S) MOSFET ID RDS(on)MAX V(BR)DSS SOT-23 / SOT-23-3L 0.028Ω@ 10V 3 30V 1.GATE 5.8 A 0.033Ω@ 4.5V 2.SOURCE JS 0.052Ω@ 2.5V 3.DRAIN 1 2 MI General FEATURE Equivalent Circuit CR ●TrenchFET Power MOSFET ●Lead free product is acquired O ●Surface mount package co mi Se APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter nd Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Pulsed Drain Current B Power Dissipation A TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V ±12 V ID 5.8 IDM 30 PD 1.4 W -55 to 150 °C TJ, TSTG Symbol A A r to uc Continuous Drain Current A Maximum 30 t ≤ 10s Steady-State Steady-State RθJA RθJL www.jsmsemi.com Typ 65 85 43 Max 90 125 60 A Units °C/W °C/W °C/W 第１／６页 AO3400A N-Channel 30-V(D-S) MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=25V, VGS=0V 1 µA IGSS Gate-Body leakage current VDS=0V, VGS=±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 VGS=4.5V, VDS=5V 30 ID(ON) JS STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage On state drain current MI mΩ VGS=4.5V, ID=5.0A 30 33 mΩ 48 52 mΩ Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VGS=2.5V, ID=4.0A CR VDS=5V, ID=5.8A Rg Gate resistance VGS=0V, VDS=15V, f=1MHz tf Turn-Off Fall Time 1030 pF 99 pF 77 pF 9.7 12 nC VGS=4.5V, VDS=15V, ID=5.8A 1.6 3.1 VGS=10V, VDS=15V, RL=2.7Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs IF=5A, dI/dt=100A/µs nC 3.3 nC 5 ns 4.8 7 ns 26.3 40 ns 4.1 6 ns 16 20 8.9 12 ns nC r to uc Turn-Off DelayTime A Ω nd Turn-On Rise Time tD(off) V 3.6 co tr 1.2 2.5 1.2 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Turn-On DelayTime 823 S mi Reverse Transfer Capacitance Gate Drain Charge 15 0.71 Se Output Capacitance Crss tD(on) 10 O Coss V A 28 gFS Qgd 1.0 25 Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance V VGS=10V, ID=5.8A RDS(ON) IS 30 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4 : June 2005 www.jsmsemi.com 第２／６页 AO3400A N-Channel 30-V(D-S) MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 25 10V 3V VDS=5V 16 20 4.5V 2.5V 12 ID(A) ID (A) 15 8 JS 5 125°C VGS=2V MI 0 1 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 CR 0 VGS=2.5V 30 VGS=4.5V 20 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 1 3 1.6 VGS=4.5V 1.4 VGS=10V 1.2 VGS=2.5V 1 co VGS=10V 10 0.8 5 10 15 20 0 25 50 nd 0 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 60 1.0E+00 r to uc 70 ID=5.8A 1.0E-01 50 125°C IS (A) RDS(ON) (mΩ ) 0.5 mi Se RDS(ON) (mΩ ) 50 40 0 1.8 O 60 25°C 4 Normalized On-Resistance 10 40 30 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 20 1.0E-05 1.0E-06 10 0 2 4 6 8 10 0.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage www.jsmsemi.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 第３／６页 AO3400A N-Channel 30-V(D-S) MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=15V ID=5.8A 1200 Capacitance (pF) VGS (Volts) 4 3 2 0 2 600 400 4 6 8 10 0 12 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics CR 40 TJ(Max)=150°C TA=25°C Se 1ms 10ms 1s TJ(Max)=150°C TA=25°C 20 1 10 100 VDS (Volts) 0 0.001 co DC 0.1 0.1 1 10 100 1000 nd r to uc D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 30 10 10s In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 25 mi 1.0 20 30 100µs 0.1s 10 15 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) RDS(ON) 10.0 limited 0.1 10 O ID (Amps) 100.0 Crss 200 MI 0 Ciss 800 Coss JS 1 1000 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.jsmsemi.com 第４／６页 AO3400A N-Channel 30-V(D-S) MOSFET SOT-23 Package Outline Dimensions JS MI Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° O Dimensions In Inches Min Max 0.045 0.035 0.000 0.004 0.035 0.041 0.012 0.020 0.006 0.003 0.118 0.110 0.055 0.047 0.100 0.089 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° co www.jsmsemi.com r to uc nd SOT-23 Suggested Pad Layout mi Se A A1 A2 b c D E E1 e e1 L L1 θ CR Symbol 第５／６页 AO3400A N-Channel 30-V(D-S) MOSFET SOT-23 -3L Package Outline Dimensions JS MI Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° O co mi Se A A1 A2 b c D E1 E e e1 L  CR Symbol www.jsmsemi.com r to uc nd SOT-23-3L Suggested Pad Layout 第６／６页