MMBT3906M

MMBT3906M PNP Transistors 3 Features  Complementary to MMBT3904M 1. Base 2. Emitter 3. Collector 2  Small Package 1 ■ Simplified outline(SOT-723) Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Power Dissipation 100 mW Thermal Resistance from Junction to Ambient 1250 ℃/W TJ Junction Temperature 150 ℃ Tstg storage Temperature -55~+150 ℃ RΘJA Electrical Characteristics Ta = 25 Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10µA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 -5 ICBO VCB=-40V,IE=0 Collector cut-off current ICEX Emitter cut-off current IEBO hFE(1) VCE=-1V,IC=-10mA hFE(2) VCE=-1V,IC=-50mA 60 hFE(3) VCE=-2V,I C=-100mA 30 Collector cut-off current DC current gain V -100 nA VCE=-30V,VEB(off)=-3V -50 nA VEB=-5V,IC=0 -100 nA 100 300 Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-50mA,IB=-5mA -0.95 V Transition frequency fT Delay time td Rise time tr Storage time ts Fall time tf www.slkormicro.com VCE=-20V,IC=-10mA,f=100MHz 300 MHz VCC=-3V,VBE(off)=-0.5V, IC=-10mA, IB1=IB2=-1mA 35 35 ns VCC=-3V,IC=-10mA IB1=IB2=-1mA 225 ns 75 ns 1 ns Rev.1 -- 17 August 2016 MMBT3906M Static Characteristic -80 hFE 200 DC CURRENT GAIN COLLECTOR CURRENT IC COMMON EMITTER VCE=-1V -350uA -300uA -250uA -200uA -40 —— Ta=100℃ -400uA -60 hFE 300 COMMON EMITTER Ta=25℃ -500uA -450uA IC (mA) -100 -150uA Ta=25℃ 100 -100uA -20 IB=-50uA -0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE 0 -0.1 -20 -1 -0.3 -10 -3 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -30 IC -200 (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 Ta=100℃ -100 Ta=25℃ -30 Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -10 β=10 -0.0 -1 -30 -10 -3 COLLECTOR CURRENT IC -100 IC -100 -1 -200 -10 -3 (mA) -100 -30 COLLECTOR CURRENT —— VBE Cob/ Cib 9 —— IC VCB/ VEB f=1MHz IE=0/IC=0 -30 Ta=25℃ Cob (pF) Ta=100℃ Cib C -10 CAPACITANCE IC (mA) COMMON EMITTER VCE=-1V COLLECTOR CURRENT -200 (mA) -3 Ta=25℃ -1 3 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 1 -0.1 -1.2 fT 600 —— IC -1 -3 REVERSE VOLTAGE V -0.3 BASE-EMMITER VOLTAGE VBE (V) PC 150 —— -10 -20 (V) Ta VCE=-20V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ 400 200 100 50 0 -1 -3 -10 COLLECTOR CURRENT www.slkormicro.com -30 IC 0 -50 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) Rev.1 -- 17 August 2016 MMBT3906M ■ SOT-723 0.5 0 1 mm scale DIMENSIONS (mm are the original dimensions) www.slkormicro.com UNIT A A1 max b b1 c D E E1 mm 0.43 0.50 0.05 0.17 0.27 0.27 0.37 0.08 0.15 1.15 1.25 0.15 0.25 0.75 0.85 3 Rev.1 -- 17 August 2016