2SC2383(RANGE:160-320)

2SC2383 TRANSISTOR (NPN) SOT-89-3L FEATURE z High voltage: VCEO=160V z Large continuous collector current capability 1. BASE 3 2 2. COLLECTOR 1 3. EMITTER MARKING：2383 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Test V(BR)CBO * conditions Min Max Unit IC= 100μA , IE=0 160 V IC= 10mA, IB=0 160 V 6 V Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE= 10μA, IC=0 Collector cut-off current ICBO VCB=150V, IE=0 1 μA Emitter cut-off current IEBO VEB=6V, IC=0 1 μA DC current gain hFE VCE=5V, IC=200mA Collector-emitter saturation voltage * Symbol 100 320 IC=500m A, IB=50mA VCE(sat) Base-emitter voltage VBE IC=5mA, VCE= 5V Transition frequency fT VCE=5V, IC=200mA Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 0.45 1 V 0.75 V 20 MHz 20 pF pulse test CLASSIFICATION OF hFE Rank O Y Range 100-200 160-320 www.fuxinsemi.com Page 1 Ver2.1 2SC2383 TRANSISTOR (NPN) Rating and characteristic curves Static Characteristic 300 (mA) 250 IC 0.7mA 150 0.6mA 0.5mA 100 0.4mA IC Ta=100℃ hFE DC CURRENT GAIN 0.8mA 200 —— COMMON EMITTER VCE= 5V 1000 1mA 0.9mA COLLECTOR CURRENT hFE 3000 COMMON EMITTER Ta=25℃ Ta=25℃ 100 10 0.3mA 0.2mA 50 IB=0.1mA 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 1 0.1 7 IC VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— IC 100 1000 (mA) IC β=10 800 Ta=25℃ 600 Ta=100 ℃ 400 200 0 0.1 1 10 100 COLLECTOR CURREMT IC 1000 —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.1 1000 1 10 100 COLLECTOR CURREMT (mA) VBE fT 100 —— IC 1000 (mA) IC (MHz) COMMON EMITTER VCE=5V (mA) 10 COLLECTOR CURRENT 1000 β=10 100 TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a fT 80 IC COLLECTOR CURRENT 1 VCE (V) 10 1 60 40 COMMON EMITTER VCE=5V Ta=25℃ 0.1 0 200 400 600 800 1000 20 20 1200 40 80 1000 Cob/Cib —— VCB/VEB 100 CAPACITANCE C (pF) COLLECTOR POWER DISSIPATION PC (mW) Ta=25 ℃ Cib Cob 10 160 —— IC 200 (mA) Ta 500 400 300 200 100 0 1 REVERSE VOLTAGE www.fuxinsemi.com PC 600 f=1MHz IE=0/IC=0 1 0.1 120 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) 10 V 30 0 25 50 75 AMBIENT TEMPERATURE (V) Page 2 100 Ta 125 150 (℃ ) Ver2.1 2SC2383 TRANSISTOR (NPN) Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 o t25 C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o