2SJ317NYTL-E-VB

2SJ317NYTL-E www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.050 at VGS = - 10 V - 7.6 0.056 at VGS = - 4.5 V - 6.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested Qg (Typ.) 13 nC APPLICATIONS • Load Switch • Battery Switch D S G G D S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IS - 2.1a, b 6.5 3.5 PD 2.5a, b 1.6a, b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V - 7.6 - 5.8 .0a, b - 6.0 - 5.2a, b - 35 - 3.5 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit - 30 ± 20 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot t ≤ 10 s Steady State Symbol RthJA RthJF Typical 40 24 Maximum 50 30 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 95 °C/W. d. Package limited. 服务热线：400-655-8788 1 2SJ317NYTL-E www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage V - 31 mV/°C 4.5 VGS(th) VDS = VGS, ID = - 250 µA - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS ≤ - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 7.0 A tr - 20 VDS = - 15 V, ID = - 7.0 A 0.056 18 VDS = - 15 V, VGS = 0 V, f = 1 MHz 1355 180 Ω S pF 145 VDS = - 15 V, VGS = - 10 V, ID = - 7.0 A VDS = - 15 V, VGS = - 4.5 V, ID = - 7.0 A 25 38 13 20 3.5 VDD = - 15 V, RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω 0.4 2.0 4.0 10 20 13 20 35 tf 9 18 td(on) 38 57 89 134 tr nC 5.5 f = 1 MHz 23 td(off) µA A 0.050 VGS = - 4.5 V, ID = - 5.6 A td(on) td(off) - 1.0 VDD = - 15 V, RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω tf 22 33 11 17 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 6.5 - 30 TC = 25 °C IS = - 5.6 A, VGS = 0 V IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.71 - 1.2 V 22 33 ns 17 26 nC 13 9 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 2SJ317NYTL-E www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 4.0 VGS = 10 V thru 4 V TC = - 55 °C 3.2 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 10 2.4 TC = 25 °C 1.6 VGS = 3 V TC = 125 °C 0.8 5 VGS = 2 V 0 0 1 2 3 4 0.0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1800 0.070 Ciss 1500 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.060 0.050 VGS = 10 V 0.040 0.030 1200 900 600 Coss 300 0.020 Crss 0.010 0 0 5 10 15 20 25 0 30 6 12 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.6 VGS = - 10 V, ID = - 5.6 A ID = 7 A 8 1.4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 18 VDS = 15 V 6 VDS = 24 V 4 2 1.2 VGS = - 4.5 V, ID = - 7 A 1.0 0.8 0 0 4 8 12 16 Qg - Total Gate Charge (nC) Gate Charge 20 24 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 2SJ317NYTL-E www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 100 10 TJ = 150 °C TJ = 25 °C 1 0.04 R DS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 7 A TJ = 125 °C 0.03 0.02 TJ = 25 °C 0.01 0.00 0 8 12 16 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 2.1 50 1.9 40 1.7 ID = 250 µA 1.5 20 30 20 1.3 1.1 - 50 4 Source-Drain Diode Forward Voltage Power (W) VGS(th) (V) 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 1s 10 s DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 服务热线：400-655-8788 4 2SJ317NYTL-E www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 ID - Drain Current (A) 8 6 4 2 0 0 25 50 75 100 125 150 T C - Case Temperature (°C) Current Derating* 5 3.0 2.5 4 Power (W) Power (W) 2.0 3 2 1.5 1.0 1 0.5 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 2SJ317NYTL-E www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 2SJ317NYTL-E www.VBsemi.com Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches DIM Millimeters Inches Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.62 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches 服务热线：400-655-8788 7 2SJ317NYTL-E www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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