S8N10

N-Ch 100V Fast Switching MOSFETs 60N02 60N02 4606A S8N10 N-Ch 20V Fast Switching MOSFETs 20N02 20N02 Product Summary  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology Description The S8N10 is the high cell density trenched BVDSS RDSON ID 100V 110mΩ 6.5A SOT89-3L Pin Configuration N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The S8N10 meets the RoHS and Green Product requirement with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ 01 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Rating 100 ±20 Unit V V A A A ID@TA=70℃ IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current2 6.5 3.2 12 PD@TA=25℃ Total Power Dissipation3 2 W TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ 1 N-Ch 100V Fast Switching MOSFETs 60N02 S8N10 60N02 4606A N-Ch 20V Fast Switching MOSFETs 20N02 20N02 Electrical Characteristics (TJ =25 ℃ unless otherwise specified） Symbol Off Characteristic Parameter V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Gate to Body Leakage Current IGSS On Characteristics note3 VGS(th) Gate Threshold Voltage Static Drain-Source On-Resistance note2 R DS(on) Dynamic Characteristics note4 C iss Test condition Min. Typ. Max. 100 110 - V VDS = 0V, VGS = ±20V - - 1 μA ±100 nA VDS = VGS, ID = 250μA 1 1.95 115 3 140 V mΩ - 206 28.9 1.4 4.3 1.5 1.1 - pF VGS = 0V, ID = 250μA VDS = 100V, VGS = 0V VGS = 10V, ID = 3A Input Capacitance C oss Output Capacitance C rss Qg Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Qgs Gate-Drain(“Miller”) Charge Qgd Switching Characteristics note4 td(on) Turn-On Delay Time tr td(off) Turn-Off Delay Time Turn-On Rise Time VDS = 50V, VGS = 0V, f = 1.0MHz IS VSD - - VDS = 50V, ID = 3A, VGS = 10V - VDD = 50V, IDS=3A RG = 2Ω, VGEN = 10V Turn-Off Fall Time tf Drain-Source Diode Characteristics and Maximum Ratings ISM - - 14.7 3.5 20.9 2.7 Maximum Continuous Drain to Source Diode Forward Current note2 - - Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage note3 VGS = 0V, IS =3A - - - 32.1 39.4 2.1 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Time Charge Qrr Diode Characteristics Peak Reverse Recovery Current Irrm VGS = 0V, IF = 3A, di/dt =100A/μs Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤2%. 4. Guaranteed by design, not subject to production 5. VDD=50 V, RG=50 Ω, L=0.3 mH, starting Tj=25 °C 02 - Units - pF - pF - nC nC - nC - ns - ns - ns ns 6.5 12 1.3 A V - A ns nC A N-Ch 100V Fast Switching MOSFETs 60N02 60N02 4606A S8N10 N-Ch 20V Fast Switching MOSFETs 20N02 20N02 Typical Electrical and Thermal Characteristics (Curves) Figure1: Output Characteristics Figure 3:Forward Characteristics of Reverse Figure 5: RDS(ON) vs. ID 03 Figure 2: Typical Transfer Characteristics Figure 4:RDS(ON) vs. VGS Figure 6:Normalized RDS(on) vs. Temperature N-Ch 100V Fast Switching MOSFETs 60N02 60N02 4606A S8N10 N-Ch 20V Fast Switching MOSFETs 20N02 20N02 Typical Performance Characteristics Figure 7: Capacitance Characteristics 04 Figure 8: Gate Charge Characteristics N-Ch 100V Fast Switching MOSFETs S8N10 60N02 60N02 4606A N-Ch 20V Fast Switching MOSFETs 20N02 20N02 SOT-89-3L Package Information 05