HUAXUANYANG
D882
HXY
ELECTRONICS CO.,LTD
NPN Plastic-Encapsulate Transistors
FEATURES
z
z
Collector Current: IC=3A
Power Dissipation of 500mw
E
C
B
SOT89-3L
Package Marking and Ordering Information
Pack
Product ID
D882
SOT89-3L
Marking
D882
C
Qty(PCS)
1000
B
E
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
3
A
Collector Power Dissipation
PC
500
mW
Thermal Resistance From Junction To Ambient
RΘJA
250
℃/W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
Shenzhen HuaXuanYang Electronics CO.,LTD
-55~+150
℃
www.hxymos.com
HUAXUANYANG
D882
HXY
ELECTRONICS CO.,LTD
NPN Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC = 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 40V, IE=0
1
µA
Collector cut-off current
ICEO
VCE= 30V, IB=0
10
µA
Emitter cut-off current
IEBO
VEB= 6V, IC=0
1
µA
hFE(1)
VCE=2V, IC= 1A
hFE(2)
VCE=2V, IC= 100mA
DC current gain
160
320
32
Collector-emitter saturation voltage
VCE(sat)
IC= 2A, IB= 0.2 A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= 2A, IB= 0.2 A
1.5
V
Transition frequency
fT
VCE= 5V , Ic=0.1A
f =10MHz
50
MHz
Typical Characteristics
Shenzhen HuaXuanYang Electronics CO.,LTD
www.hxymos.com
HUAXUANYANG
HXY
ELECTRONICS CO.,LTD
www.cj-elec.com
Shenzhen HuaXuanYang Electronics CO.,LTD
D882
NPN Plastic-Encapsulate Transistors
A,Jun,2014
www.hxymos.com
HUAXUANYANG
HXY
ELECTRONICS CO.,LTD
SOT 8 9 -3L
D882
NPN Plastic-Encapsulate Transistors
Package Outline Dimensions
Shenzhen HuaXuanYang Electronics CO.,LTD
www.hxymos.com
HUAXUANYANG
D882
HXY
ELECTRONICS CO.,LTD
NPN Plastic-Encapsulate Transistors
Attention
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www.hxymos.com