ATM2320KNSQ

ATM2320KNSQ 20V N-Channel Enhancement Mode MOSFET Descriptions The ATM2320KNSQ is N-Channel logic enhancement mode power field effect transistor which is produced using high cell density advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. The device is particularly suited for low voltage application, and low in-lin power loss are needed in a very small outline surface mount package. Features        RDS(ON) = 14mΩ(typ.) @ VGS=4.5V RDS(ON) = 18mΩ(typ.) @ VGS=2.5V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC current capability This is a full RoHS compliance SOP89-3 package design ESD Rating:2000V HBM Applications    Power Management in Note Book Portable Equipment Battery Powered System Absolute Maximum Ratings (Ta=25℃ unless otherwise specified) Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V ID 5 A Drain Current-Pulsed IDM 30 A Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ,TSTG 150, -55 ~ +150 ℃ Parameter Symbol Drain Current-Continuous Maximum Junction-to-Ambient t≤10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead Steady-State RθJA RθJL AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/5 Typ Max Unit 64 83 ℃/W 89 120 ℃/W 53 70 ℃/W Dated:03/2020 Rev: 1.0 ATM2320KNSQ Electrical Characteristics(Ta=25℃ unless otherwise specified) Parameter Symbol Static Parameters Drain-Source breakdown voltage BVDSS Zero Gate voltage drain current IDSS Gate-Body leakage current IGSS VGS(th) Gate Threshold voltage ID(ON) On state drain current Static Drain-source on-resistance RDS(on) Test Conditions ID=250uA,VGS=0V VDS=16V,VGS=0V VDS=0V,VGS=±4.5V Min Typ Max Unit 20 - - V - - 1 uA - - ±1 uA ±10 uA VDS=0V,VGS=±8V VGS=VDS，ID=250uA 0.4 0.6 1 V VGS=4.5V,VDS=5V 30 - - A VGS=4.5V，ID=5A 14 25 mΩ VGS=2.5V,ID=3A 18 35 mΩ Forward Transconductance gFS VDS=5V，ID=5A - 31 - S Diode Forward Voltage VSD Is=1A,VGS=0V - 0.7 1.3 V IS - - 2.5 A Input Capacitance Ciss - 1120 - pF Output capacitance Coss - 195 - pF Reverse transfer capacitance Crss - 155 - pF - 4.0 - Ω - 16 - nC - 1.7 - nC - 6.8 - nC - 7.2 - ns - 11 - ns - 64 - ns - 32 - ns Maximum Body-Diode Continuous Current Dynamic Parameters Gate resistance Rg VGS=0V,VDS=10V,f=1MHZ VGS=0V,VDS=0V,f=1MHZ Switching Parameters Total Gate charge Qg Gate Source charge Qgs Gate Drain charge Qgd Turn-on delaytime tD(on) Turn-on rise time tr Turn-off delaytime tD(off) VGS=4.5V,VDS=10V,ID=5A VGS=5V,VDD=10V,RL=1.35Ω, RGEN=3Ω Turn-off fall time tf Body Diode reverse recovery Time trr IF=5A,dI/dt=100A/us - 32 - ns Body diode reverse recovery charge Qrr IF=5A,dI/dt=100A/us - 12 - nC Notes: 1. Pulse test: pulse width