CXT5551
Plastic-Encapsulate Transistors
Features
C
• Switching and amplification in high voltage
Applications such as telephony
• Low current(max. 600mA)
• High voltage(max.180V)
B
C E
Schematic diagram
SOT-89-3L top view
Application
C
• High voltage amplifier application
1G6
B
E
C
Marking and pin assignment
Maximum Ratings(Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Value
Unit
180
160
V
V
6
V
IC
Collector Current
600
mA
PC
Collector Power Dissipation
500
mW
-55~+150
°C
TJ,Tstg
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Operation Junction and Storage Temperature
Range
1
CXT5551
Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol
Parameter
V(BR)CBO Collector-base breakdown voltage
Condition
IC=100μA, IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=1mA, IB=0
Min
Typ
Max
Unit
180
--
--
V
160
--
--
V
V(BR)EBO Emitter-base breakdown voltage
IE=10μA, IC=0
6
--
--
V
ICBO
Collector cut-off current
VCB=120V , IE=0
--
--
50
nA
IEBO
Emitter cut-off current
VCB= 4V , IC=0
--
--
50
nA
VCE=5V, IC= 1mA
80
--
--
VCE=5V, IC= 10mA
100
--
300
VCE=5V, IC= 50mA
30
--
--
IC=10 mA, IB= 1mA
--
--
0.15
V
IC=50 mA, IB= 5mA
--
--
0.2
V
IC=10 mA, IB= 1mA
--
--
1
V
IC=50 mA, IB= 5mA
--
--
1
V
100
--
--
MHz
--
--
35
pF
--
--
35
dB
hFE
VCE(sat)
VBE(sat)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
fT
Transition frequency
Cob
Collector output capacitance
NF
Noise figure
VCE=10V, IC= 10mA
f=100MHz
VCB=10V,IE=0,f=1MHz
VCE=5V,Ic=0.2mA,
f=10Hzto15.7KHZ,Rs=10Ω
Typical Operating Characteristics
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2
CXT5551
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3
CXT5551
SOT-89-3L Package information
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
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Dimensions in Millimeters(mm)
Min
Max
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF
2.300
2.600
3.940
4.250
1.500 TYP
3.000 TYP
0.900
1.200
4
Dimensions in Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF
0.091
0.102
0.155
0.167
0.060 TYP
0.118 TYP
0.035
0.047
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