BCX51-16

BCX51,BCX52,BCX53 SOT-89-3L Plastic-Encapsulate PNP Transistors SOT-89-3L FEATURES z NPN Complements to BCX54,BCX55,BCX56 z Low Voltage z High Current 1. BASE 2. COLLECTOR APPLICATIONS z Medium Power General Purposes z Driver Stages of Audio Amplifiers 3. EMITTER MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD BCX52:AE, BCX52-10:AG, BCX52-16:AM BCX53:A H, BCX53-10:AK, BCX53-16:AL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BCX51 -45 BCX52 -60 BCX53 -100 BCX51 -45 BCX52 -60 BCX53 -80 Unit V V Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BCX51,BCX52,BCX53 SOT-89-3L Plastic-Encapsulate PNP Transistors ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage T est conditions IC=-100µA,IE=0 V(BR)CBO V(BR)CEO* IC=-10mA,IB=0 Min BCX51 -45 BCX52 -60 BCX53 -100 BCX51 -45 BCX52 -60 BCX53 -80 Typ Max Unit V V V(BR)EBO IE=-100µA,IC=0 Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 µA hFE(1)* VCE=-2V, IC=-5mA 63 hFE(2)* VCE=-2V, IC=-150mA 63 hFE(3)* VCE=-2V, IC=-0.5A 40 VCE(sat)* IC=-0.5A,IB=-50mA -0.5 V Base -emitter voltage VBE* VCE=-2V, IC=-0.5A -1 V Transition frequency fT DC current gain Collector-emitter saturation voltage -5 VCE=-5V,IC=-10mA, f=100MHz V 250 50 MHz * Pulse Test CLASSIFICATION OF hFE(2) BCX51 BCX51-10 BCX51-16 RANK BCX52 BCX52-10 BCX52-16 BCX53 BCX53-10 BCX53-16 RANGE 63–250 63–160 Revision:20170701-P1 ht t p : // 100–250 www.lgesem i .c o m mail:lge@lgesemi.com Typical Characteristics Static Characteristic -400 o hFE -300 IC -1.8mA -1.6mA -250 COLLECTOR CURRENT Ta=100 C -2.0mA DC CURRENT GAIN (mA) VCE= -2V COMMON EMITTER Ta=25℃ -350 hFE —— IC 1000 -1.4mA -1.2mA -200 -1.0mA -150 -0.8mA 100 o Ta=25 C -0.6mA -100 -0.4mA -50 IB=-0.2mA -0 10 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VCE -6 VBEsat —— IC -1000 -10 COLLECTOR CURRENT VCEsat —— -400 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -1 (V) -800 Ta=25℃ -600 -400 Ta=100℃ -100 IC -1000 (mA) IC β=10 -300 -200 Ta=100℃ -100 -200 Ta=25℃ -0 -0.1 -1 -10 -100 COLLECTOR CURRENT fT 150 —— IC -1 (mA) -10 -100 COLLECTOR CURRENT IC Cob / Cib 1000 —— IC -1000 (mA) VCB / VEB (MHz) f=1MHz IE=0 / IC=0 o Ta=25 C (pF) fT C 100 CAPACITANCE TRANSITION FREQUENCY -0 -0.1 -1000 50 100 Cib Cob 10 VCE=-5V o Ta=25 C 0 -0 -20 -40 -60 COLLECTOR CURRENT IC —— -80 IC 1 -0.1 -100 VBE COLLECTOR POWER DISSIPATION Pc (W) IC (mA) Pc 0.75 -1000 COLLECTOR CURRENT -1 -10 REVERSE VOLTAGE (mA) -100 o Ta=100 C -10 Ta=25℃ -1 —— V -20 (V) Ta 0.50 0.25 VCE=-2V -0.1 0.00 -0 -200 -400 -600 BASE-EMITTER VOLTAGE -800 VBE(mV) -1000 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃ ) 150 BCX51,BCX52,BCX53 SOT-89-3L Plastic-Encapsulate PNP Transistors SOT-89-3L Package Outline Dimensions Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com