FDD5614P

FDD5614P Product specification FDD5614P General Description BVDSS These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. RDSON -60V Features ID -15A 75mΩ  -60V,-15A, RDS(ON) =75mΩ@VGS = -10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Motor Drive  Power Tools  LED Lighting Reference News PACKAGE OUTLINE P-Channel MOSFET Marking D MSKSEMI G FDD5614P S TO-252 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V Drain Current - Continuous (TC=25℃) -15 A Drain Current - Continuous (TC=100℃) -11 A Pulsed1 -45 A 40 W 0.16 W/℃ ID Drain Current - IDM Power Dissipation (TC=25℃) PD Power Dissipation - Derate above 25℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 6.1 ℃/W Copyright© Msksemi Incorporated www.msksemi.com FDD5614P Electrical Characteristics (TJ=25 Off Characteristics Symbol BVDSS ℃, unless otherwise noted) Parameter Drain-Source Breakdown Voltage △BV DSS /△T J BVDSS Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- V Reference to 25℃ , ID=-1mA --- --- -0.05 --- V/℃ VDS=-60V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-48V , VGS=0V , TJ=125℃ --- --- -10 uA --- --- ±100 nA VGS=-10V , ID=-5A --- 75 100 mΩ VGS=-4.5V , ID=-4A --- 100 130 mΩ -1.0 -1.6 -2.5 V --- 5 --- mV/℃ --- 8.5 --- S --- 16.4 --- --- 2.8 --- VGS= ±20V , VDS=0V On Characteristics RDS(ON) VGS(th) △V GS(th) gfs Static Drain-Source On-Resistance Gate Threshold Voltage VGS(th) Temperature Coefficient Forward Transconductance VGS=VDS , ID=-250uA VDS=-10V , ID=-6A Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 Qgs Gate-Source Charge3 , 4 Qgd Gate-Drain Charge3 , 4 --- 3.6 --- Td(on) Turn-On Delay Time3 , 4 --- 8.3 --- VDD=-30V , VGS=-10V , --- 29.6 --- RG=6Ω ID=-1A --- 51.7 --- --- 15.6 --- --- 870 --- --- 70 --- --- 42 --- --- 16 --- Ω Min. Typ. Max. Unit --- --- -15 A --- --- -30 A --- --- -1.2 V Tr Td(off) Tf Rise Time3 , 4 Turn-Off Delay Time3 , 4 Fall Time3 , 4 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg VDS=-30V , VGS=-10V , ID=-6A Gate resistance VDS=-30V , VGS=0V , F=1MHz VGS=0V, VDS=0V, F=1MHz Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Conditions IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ nC ns pF Note : 1.Repetitive Rating : Pulsed width limited by maximum junction temperature. 2.VDD=25V,VGS=10V,L=0.1mH,IAS=11A.,RG=25Ω,Starting TJ=25℃ . 3.The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%. 4.Essentially independent of operating temperature. Copyright© Msksemi Incorporated www.msksemi.com TC , Case Temperature (℃) Continuous Drain Current vs. TC Fig.5 Fig.2 Normalized RDSON vs. TJ Fig.4 Qg , Gate Charge (nC) Gate Charge Waveform -ID , Continuous Drain Current (A) TJ , Junction Temperature (℃) Normalized Vth vs. TJ Normalized Thermal Response Fig.3 TJ , Junction Temperature (℃) -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage Fig.1 Normalized On Resistance -ID , Continuous Drain Current (A) FDD5614P Square Wave Pulse Duration (s) Normalized Transient Impedance Copyright© Msksemi Incorporated Fig.6 -VDS , Drain to Source Voltage (V) Maximum Safe Operation Area www.msksemi.com FDD5614P VDS 90% 10% VGS Td(on) Tr Ton Fig.7 Td(off) Tf Toff Switching Time Waveform Copyright© Msksemi Incorporated www.msksemi.com FDD5614P PACKAGE MECHANICAL DATA D A D1 c V L3 h E φ L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 Φ θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 1.100 1.300 0° 8° 0.000 0.300 5.250 REF. Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0.043 0.051 0° 8° 0.000 0.012 0.207 REF. Suggested Pad Layout REELSPECIFICATION P/N FDD5614P Copyright© Msksemi Incorporated PKG QTY TO-252 2500 www.msksemi.com FDD5614P Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not handle applications that require extremely high levels of reliability, such as life-support have specifications that can systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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