MPS2222A
General Purpose Transistor
NPN Silicon
C
A
B
FEATURE
Complementary PNP Type available (MPS2907A)
DIM
A
B
C
D
E
F
G
H
J
L
M
E
G
J
D
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Units
Collector-Base Voltage
75
V
VCEO
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
6
V
VEBO
Collector Current -Continuous
600
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
O
CR
IC
F
1
2
1. EMITTER
C
VCBO
H
F
3
M
Value
L
Parameter
MI
JS
Symbol
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.55 MAX
1.00
1.27
0.85
0.45
_ 0.50
14.00 +
2.30
0.51 MAX
2. BASE
3. COLLECTOR
TO-92
n
co
mi
Se
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
MIN
MAX
UNIT
V(BR)CBO
IC= 10uA , IE=0
75
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 10mA ,
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 10uA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 60V, IE=0
Collector cut-off current
ICEX
VCE= 60V,VEB(Off)=3V
Emitter cut-off current
IEBO
VEB= 3 V, IC=0
hFE(1)
VCE=10V,IC= 150mA
hFE(2)
VCE=10V,IC= 0.1mA
nA
10
nA
100
nA
100
300
or
Base-emitter saturation voltage
10
VCE=10V, IC= 500mA
hFE(3)
Collector-emitter saturation voltage
ct
*
IB=0
du
Collector-base breakdown voltage
DC current gain
*
conditions
40
42
VCE(sat)(1)
*
IC= 500mA, IB=50mA
0.6
V
VCE(sat)(2)
*
IC= 150mA, IB=15mA
0.3
V
IC= 500mA, IB= 50mA
1.2
V
VBE(sat)
*
Delay time
td
VCC=30V, VEB(Off)=-0.5V,
10
nS
Rise time
tr
IC=150mA,IB1=15mA
25
nS
Storage time
tS
225
nS
Fall time
tf
60
nS
Transition frequency
fT
VCC=30V,Ic=150mA,IB1=IB2=15mA
VCE=20V, IC=20mA, f=100MHz
300
MHz
pulse test
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第1/2页
MPS2222A
Typical Characteristics
O
CR
MI
JS
du
n
co
mi
Se
or
ct
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第2/2页
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