IRLML2502TRPBF

IRLML2502TR 20V N-Channel Enhancement Mode MOSFET  FEATURE  20V/2.0A, RDS(ON)=80mΩ (typ.)@V GS=1.8V  Super high design for extremely low R DS(ON)  Exceptional on-resistance and Maximum DC to r  20V/4.5A, RDS(ON)=25mΩ (typ.)@V GS=4.5V 20V/2.5A, RDS(ON)=55m Ω (typ.)@V GS=2.5V   Full RoHS compliance  SOT23-3L package design uc current capability nd  DESCRIPTION The 2502 is the N-Channel logic enhancement  APPLICATIONS mode power field effect transistor is produced using Power Management  Portable Equipment  DC/DC Converter particularly suited for low voltage application, and  Load Switch low in-line power loss are needed in a very small  DSC outline surface mount package.  LCD Display inverter This high density process is especially tailored to Symbol VDSS VGSS Se CR O ABSOLUTE MAXIMUM RATINGS ( TA = 25℃ ID Unless otherwise noted ) Parameter Typical Unit Drain-Source Voltage 20 V Gate-Source Voltage ±10 V 4.5 A JS MI  mi minimize on-state resistance. These devices are co  high cell density advanced trench technology.. Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=70℃) VGS=10V 3.0 IDM Pulsed Drain Current 20 A IS Continuous Source Current (Diode Conduction) 1.5 A PD Power Dissipation TJ Operation Junction Temperature TSTG Storage Temperature Range RθJA Thermal Resistance Junction to Ambient TA=25℃ 1.5 TA=70℃ 0.9 W 150 ℃ -55~+150 ℃ 90 ℃/W Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress rating only and functional device operation is not implied www.jsmsemi.com 第１页，共５页 IRLML2502TR 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS(TA=25℃ Symbol Parameter Unless otherwise noted) Condition Min Typ Max Unit Static Parameters Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 IGSS Gate Leakage Current VDS=0V, VGS=±12V VDS=20V, VGS=0 IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0 TJ=55℃ Drain-Source On-Resistance Diode Forward Voltage 60 VGS=1.8V, ID=2.0A 65 90 0.78 1.2 VDS=10V 11 13 VGS=4.5V 1.45 co Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Tr Td(off) Tf Se Turn-On Time CR O Td(on) Turn-Off Time 5 40 mi Qg nA VGS=2.5V, ID=2.5A IS=1.7A, VGS=0V Dynamic Parameters ±100 45 Source-Drain Diode VSD V 25 nd RDS(ON) 1.0 1 uc VGS=4.5V, ID=3.0A V to r V(BR)DSS uA mΩ V nC ID=5.0A 2.3 VDS=10V 578 VGS=0V 116 f=1MHz 96 VDS=10V 14.5 25 ID=1.0A 42 62 VGEN=4.5V 46 67 RG=6Ω 34 43 pF nS Note: 1. Pulse test: pulse width