FDN86246

FDN86246 Description Product Summary The FDN86246is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FDN86246meet the RoHS and Green Product requirement with full function reliability approved. CR MI JS ⚫ ⚫ ⚫ ⚫ VDS 150 V RDS(ON),max 280 mΩ ID 1.8 A SOT23 Pin Configuration Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology D O c mi Se Absolute Maximum Ratings G S Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ID@TA=25℃ IDM PD@TA=25℃ V Continuous Drain Current, VGS @ 1.8 A Continuous Drain Current, VGS @ 10V1 1.4 A 7.2 A 1.3 W -55 to 150 ℃ -55 to 150 ℃ Pulsed Drain Total Power Current2 Dissipation3 c du on ID@TA=70℃ ±20 10V1 TSTG Storage Temperature Range TJ Operating Junction Temperature Range r to Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 1 www.jsmsemi.com Typ. Max. Unit --- 100 ℃/W --- 80 ℃/W 第１／５页 FDN86246 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Min. Typ. Max. Unit 100 --- --- V VGS=10V , ID=2A --- 240 280 VGS=4.5V , ID=1A --- 250 300 VGS=0V , ID=250uA m VGS=VDS , ID =250uA 1.0 2 2.5 V Drain-Source Leakage Current VDS=150V , VGS=0V , TJ=25℃ --- --- 1 uA IDSS Drain-Source Leakage Current VDS=150V , VGS=0V , TJ=125℃ --- --- 30 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Qg Total Gate Charge (10V) --- 18 --- --- 4.6 --- Gate-Drain Charge --- 5.7 --- Turn-On Delay Time --- 13 --- Qgd Td(on) Tr Td(off) Rise Time VDD=75V , VGS=10V , RG=6 --- 19 --- Turn-Off Delay Time ID=2A --- 26 --- ns 9 --- --- 840 --- --- 119 --- --- 25 --- Min. Typ. Max. Unit --- --- 1.8 A --- 1.2 V O --- Input Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Symbol Parameter Continuous Source Current1,4 Diode Forward Voltage2 VDS=75V , VGS=0V , f=1MHz c mi Se Output Capacitance VSD nC Fall Time Coss IS VDS=75V , VGS=10V , ID=2A Gate-Source Charge c du on Tf Ciss CR MI JS Gate Threshold Voltage IDSS Qgs \ Conditions Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. r to www.jsmsemi.com 第２／５页 FDN86246 Typical Characteristics O CR MI JS c du on c mi Se r to www.jsmsemi.com 第３／５页 FDN86246 O CR MI JS c du on c mi Se r to www.jsmsemi.com 第４／５页 FDN86246 Ordering Information Part Number FDN86246 Package code SOT-23 Packaging 3000/Tape&Reel O CR MI JS c du on c mi Se r to www.jsmsemi.com 第５／５页