MMBT2222A

MMBT2222A NPN General Purpose Amplifier FEATURES  Epitaxial planar die construction.  Complementary PNP type available MMBT2907A.  Ultra-small surface mount package.  MSL 1 1P APPLICATIONS Use as a medium power amplifier.  Switching requiring collector currents up to 500mA. SOT-23 CR MI JS  Symbol Parameter O MAXIMUM RATING @ Ta=25℃ unless otherwise specified mi Se Value Unit 75 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 600 mA 1.5 A Collector Current -Continuous ICM Collector Current –Peak pulse width≤40us,δ = 0.35 PC Collector Dissipation Alumina Substrate (Note 1) TA = 25°C PC Collector Dissipation FR−5 Board (Note 2) TA = 25°C nd co IC 300 mW uc mW RθJA Thermal resistance junction to ambient 417 °C/W RθjC Thermal Resistance Junction to Case 250 °C/W TJ,TSTG Junction and Storage Temperature -55 to +150 225 r to °C Note 1. FR−5 = 1.0 0.75 0.062 in. Note 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. www.jsmsemi.com 第１／４页 MMBT2222A NPN General Purpose Amplifier ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA IC=0 6 V Collector cut-off current ICBO VCB=60V IE=0 0.01 μA Collector cut-off current ICEX VCE=60V,VBE=-3.0V 0.01 μA Emitter cut-off current IEBO VEB=3V IC=0 0.01 μA MI JS hFE O CR DC current gain VCE=10V IC=150mA 100 VCE=10V IC=0.1mA 35 VCE=10V IC=1.0mA 50 VCE=10V IC=10mA 75 VCE=10V IC=10mA TA=-55℃ 35 VCE=10V IC=500mA 40 VCE=1V IC=150mA 50 TYP MAX UNIT 300 mi Se Collector-emitter saturation voltage VCE(sat) IC=500mA IB=50mA IC=150mA IB=15mA 1.0 0.3 V Base-emitter saturation voltage VBE(sat) IC=500mA IB=50mA IC=150mA IB=15mA 2.0 1.2 V Transition frequency fT VCE=20V IC=20mA f=100MHz Output capacitance Cobo VCB=10V,IE=0,f=1.0MHz 8.0 pF Input capacitance Cibo VEB=0.5V,IC=0, f=1.0MHz 25 pF Delay time td Rise time tr Storage time ts Fall time tf co 0.6 300 MHz 10 ns 25 ns 225 ns 60 ns r to uc nd Vcc=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA VCC=30V, IC=150mA IB1=-IB2=15mA ESD RATING Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C www.jsmsemi.com 第２／４页 MMBT2222A NPN General Purpose Amplifier TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified O CR MI JS r to uc nd co mi Se www.jsmsemi.com 第３／４页 MMBT2222A NPN General Purpose Amplifier PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A Dim Min Max A 2.70 3.10 B 1.10 1.50 C 0.90 1.10 D 0.30 0.50 E 0.35 0.48 G 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 E K B JS J D MI G CR H C O All Dimensions in mm 0.95 0.95 nd co mi Se SOLDERING FOOTPRINT 0.90 r Unit : mm 0.80 to uc 2.00 PACKAGE INFORMATION Device Package Shipping MMBT2222A SOT-23 3000 pcs / Tape & Reel www.jsmsemi.com 第４／４页