2CL71MT

2CL71MT 5.0mA 8.0kV 80nS SMD High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. Fast recovery. 2. High reliability design. 3. SMD encapsulation. 4. Conform to RoHS and SGS. 5. Epoxy resin molded in vacuumHave SIZE: (Unit:mm) HVGT NAME: SMA anticorrosion in the surface. APPLICATIONS: 1. Air purification, negative ions. 2. Electrostatic voltage doubling circuit . 3. Other high voltage rectifier circuits. 4. Copier and X-ray. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: Radial vane. 3. Net weight: 0.06 grams (approx). MAXIMUM RATINGS AND CHARACTERISTICS: Items (Absolute Maximum Ratings) Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 8.0 kV Non-Repetitive Peak Renerse Voltage VRSM TA=25°C 8.8 kV Average Forward Current Maximum IFAVM TA=25°C 5.0 mA TOIL=55°C -- mA Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS 0.5 A Junction Temperature TJ 125 °C Allowable Operation Case Temperature Tc -40~+125 °C TSTG -40~+150 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Items Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance TA=25°C (Unless Otherwise Specified) Symbols Condition Data value Units VFM at 25°C; at IFAVM 20 V IR1 at 25°C; at VRRM 2.0 uA IR2 at 100°C; at VRRM 50 uA TRR at 25°C; IF=0.5IR; IR =IFAVM; IRR =0.25IR 80 nS CJ at 25°C; VR=0V; f=1MHz 1.0 pF GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2020-08 1 / 2 2CL71MT 5.0mA 8.0kV 80nS SMD High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------Forward Current Derating Curve Reverse Recovery Measurement Waveform Average Forward Current-% 125 TRR 100 IF 75 0 50 IRR 25 0 0 25 50 75 100 125 Temperature(℃) 150 175 IR Typical data capture points: IF =0.5IR , IR,IRR =0.25IR IR is typically the rated average forward current maximum (IFAVM) of the D.U.T Non-Repetitive Surge Current 100 75 Peak Forward Surge Current -% 50 25 0 1 10 Cycles (60Hz) Type Marking 2CL71MT NOTES: 1. Minimum packing quantity:2,000PCS 2. Specifications based on diode P.C.B. mounted on 5.0 mm x 5.0 mm 100 Code Cathode Mark MT08 HVGT copper solder pads. GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2020-08 2 / 2