D882M

D882M TRANSISTOR (NPN) TO-252/TO-251 Plastic-Encapsulate Transistors TO-252/TO-251 Features ● power switching applications 1.BASE 2.COLLECTOR 3.EMITTER Marking :D882M MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6 V IC 3 A Collector Current -Puised ICM 2 A Collector Power Dissipation PC 1.25 W RΘJA 125 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55～+150 ℃ Collector Current -Continuous Thermal Resistance From Junction To Ambient 1 2022/12/15 D882M ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V Collector cut-off current ICBO VCB= 40 V , IE=0 1 μA Collector cut-off current ICEO VCE= 30V , IB=0 10 μA Emitter cut-off current IEBO VEB= 6V , IC=0 1 μA DC current gain hFE VCE= 2V, IC= 1A 60 hFE VCE= 2V, IC= 500mA 100 Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2A 0.5 V Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2A 1 V Transition frequency fT VCE= 5V, IC= 0.1A f=1MHz Fall time tf Storage time ts IC=1A, IB1=-IB2=0.2A VCC=100V 400 50 80 1.5 MHz 0.5 μs 4 μs CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 2 2022/12/15 D882M TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS 3 2022/12/15 D882M TO-252 PACKAGA OUTLINE DIMENSIONS 4 2022/12/15 D882M TO-251 PACKAGA OUTLINE DIMENSIONS 5 2022/12/15