BZT52C6V2

BZT52C2V4-BZT52C75 ZENER DIODE SOD-123 Features 1.80(.071) Low Zener Impedance 1.40(.055) 500mW; Power Dissipation of 500mW High Stability and High Reliability 3.86(0.152) 2.84(0.112) 3.56(0.145) 2.54(0.100) Mechanical Data .71(0.028) .50(0.020) .15(.006) 1.35(.053) MAX .94(.037) Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case .25(.010) MIN Dimensions in millimeters and (inches) Maximum ratings (Tamb=25C unless otherwise specified) PARAMETER Forward voltage SYMBOLS Value UNITS VF 0.9 V 500 mW -65 to +150 C Power dissipation (Note1) Pd Operating and storage temperature range TSTG Note 1: Valid provided that leads at a distance of 10mm from case are kept at ambient temperature 1 BZT52C2V4-BZT52C75 ELECTRICAL CHARACTERISTICS (@ TA=25C unless otherwise specified) Device Marking Zener Voltage Range Vz@Izt Izt Maximum Zener Impedance Zzt Zzk Izk @Izt @Izk mA Ω Maximum Reverse Current IR VR Typical Temperature coefficent @ IZTC=mV/℃ Min Max Test Current IZTC Nom(V) Min(V) Max(V) mA uA V BZT52C2V4 WX 2.4 2.2 2.6 5 100 600 1.0 50 1.0 -3.5 0 mA 5 BZT52C2V7 W1 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 5 BZT52C3V0 W2 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 5 BZT52C3V3 W3 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 5 BZT52C3V6 W4 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 5 BZT52C3V9 W5 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V3 W6 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 5 BZT52C4V7 W7 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 5 BZT52C5V1 W8 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 5 BZT52C5V6 W9 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 5 BZT52C6V2 WA 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 5 BZT52C6V8 WB 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 5 BZT52C7V5 WC 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 5 BZT52C8V2 WD 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 5 BZT52C9V1 WE 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 5 BZT52C10 WF 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 5 BZT52C11 WG 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 5 BZT52C12 WH 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 5 BZT52C13 WI 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 5 BZT52C15 WJ 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 5 BZT52C16 WK 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 5 BZT52C18 WL 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 5 BZT52C20 WM 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 5 BZT52C22 WN 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 5 BZT52C24 WO 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 5 BZT52C27 WP 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 2 BZT52C30 WQ 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 2 BZT52C33 WR 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 2 BZT52C36 WS 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 2 BZT52C39 WT 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 2 BZT52C43 WU 43 40.0 46.0 2 100 700 1.0 0.1 32.0 10.0 12.0 5 BZT52C47 WV 47 44.0 50.0 2 100 750 1.0 0.1 35.0 10.0 12.0 5 BZT52C51 WW 51 48.0 54.0 2 100 750 1.0 0.1 43.0 10.0 12.0 5 BZT52C56 N3 56 53.20 58.80 2.2 150 1300 0.25 0.1 39.0 10.0 15.0 5 BZT52C62 N5 62 58.90 65.10 2.0 185 1400 0.25 0.1 47.0 10.0 15.0 5 BZT52C68 P1 68 64.60 71.40 1.8 230 1600 0.25 0.1 52.0 10.0 15.0 5 BZT52C75 P2 75 71.25 78.75 1.7 270 1700 0.25 0.1 56.0 10.0 15.0 5 2 BZT52C2V4-BZT52C75 ELECTRICAL CHARACTERISTICS (at TA=25 C unless otherwise noted) Breakdown characteristics at Tj=constant (pulsed) Forward characteristics Admissible power dissipation versus ambient temperature 3