8205H

8205H 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 25.3mΩ RDS(ON), Vgs @ 4.5V, Ids @ 6A = 19.8m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163 (SOT-23-6L) Millimeter REF. Min. A REF. Max. 1.10 MAX. L Millimeter Min. Max. 0.45 REF. A1 0 0.10 L1 0.60 REF. A2 0.70 1.00 θ 0° 10° b 0.30 0.50 D 0.12 REF. 2.70 3.10 e 0.95 REF. E E1 2.60 1.40 e1 1.90 REF. c 3.00 1.80 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 ID 6 IDM 25 Continuous Drain Current Pulsed Drain Current 1) TA = 25oC Maximum Power Dissipation o TA = 75 C TJ, Tstg Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) PD 2) RθJA Unit V A 1.4 W 1 o -55 to 150 100 C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 1 8205H 20V Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Symbol Parameter = 250uA Drain-Source Drain-Source On-State Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage 1) - - 25.3 32 RDS(on) VGS = 4.5V, ID = 6A 19.8 25 VGS(th) VDS =VGS, ID = 250uA IDSS VDS = 16V, VGS = 0V Gate Body Leakage IGSS VGS = ± 12V, VDS = 0V gfs VDS = 5V, ID =6A Dynamic 20 Max. R VGS = 2.5V, DS(on) BV = 0V, ID ID = 5.2A DSS VGS Zero Gate Voltage Drain Current 0 Forward Transconductance Typ. Unit Test Condition Static Resistance 1) Min. 0.6 V mΩ 1.5 V 1 uA ±100 nA 22 S 1) Total Gate Charge Qg VDS = 10V, ID = 6A 5 Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr VDD = 10V, RG = 6Ω 11 Turn-Off Delay Time td(off) ID = 1A, VGS= 4.5V 35 Turn-Off Fall Time VGS = 4.5V Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 2.1 10 ns 30 tf Input Capacitance nC 1.1 VDS = 8V, VGS = 0V f = 1.0 MHz 600 pF 330 140 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage 1) IS VSD IS = 1.7A, VGS = 0V 0.72 1.7 A 1.2 V Pulse test: pulse width