0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
S1M

S1M

  • 厂商:

    DIOS(迪恩思)

  • 封装:

    SMA(DO-214AC)

  • 描述:

  • 数据手册
  • 价格&库存
S1M 数据手册
S1A THRU S1M SURFACE MOUNT GENERAL RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current -1.0 Ampere Features DO-214AC/SMA The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds at terminals Glass passivated chip junction 0.118(3.00) 0.094(2.40) 0.071 (1.80) 0.047 (1.20) 0.181(4.60) 0.157(4.00) 0.016(0.41) 0.006(0.15) 0.091(2.30) 0.067(1.70) 0.063(1.60) 0.029(0.75) 0.008(0.20) 0.002(0.05) 0.213(5.40) 0.188(4.80) Mechanical Data Case : JEDEC DO-214AC molded plastic body over passivated chip Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight :0.002 ounce, 0.07 grams Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=100C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range SYMBOLS S1A S1B S1D S1G S1J S1K S1M UNITS VRRM VRMS VDC 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V I(AV) 1.0 A IFSM 30.0 A VF 1.1 V IR 5.0 50.0 µA CJ RθJA TJ,TSTG 15.0 75.0 -55 to +150 pF C/W C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas 1 S1A THRU S1M FIG. 1- FORWARD CURRENT DERATING CURVE 1.0 P.C.B mounted on 0.2*0.2"(5.0*5.0mm) copper pad areas 0.8 0.6 Single Phase Half Wave 60Hz Resistive or inductive Load 0.4 0.2 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RATINGS AND CHARACTERISTIC CURVES S1A THRU S1M FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 25 20 15 10 8.3ms SINGLE HALF SINE-WAVE 175 5.0 1 10 LEAD TEMPERATURE, C NUMBER OF CYCLES AT 60 Hz 20 10 1 TJ=25 C PULSE WIDTH=300 µs 2%DUTY CYCLE 0.01 0.6 0.8 1.0 1.2 1.4 1.5 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0.1 1,000 100 TJ=100 C 1 0.1 TJ=25 C 0.01 0 20 40 60 80 100 200 TJ=25 C 10 TRANSIENT THERMAL IMPEDANCE, C/W PERCENT OF PEAK REVERSE VOLTAGE,% FIG. 5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF TJ=150 C 10 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 100 100 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 1 0.1 1.0 10 REVERSE VOLTAGE,VOLTS 100 t,PULSE DURATION,sec. 2

很抱歉,暂时无法提供与“S1M”相匹配的价格&库存,您可以联系我们找货

免费人工找货
S1M
    •  国内价格
    • 2000+0.02300
    • 4000+0.02240

    库存:4000