2302

2302 N-Channel 20-V(D-S) MOSFET SOT-23 Plastic-Encapsulate MOSFETS Features SOT-23 ※ TrenchFET Power MOSFET 1.GATE 2.SOURCE 3.DRAIN Equivalent Circuit Application ※ Load Switch for Portable Devices ※ DC/DC Converter MARKING S2 V(BR)DSS 20 V RDS(on)MAX 45mΩ@4.5V 55mΩ@2.5V ID 3A Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current ID 3 Pulsed Diode Curren IDM 20 Continuous Source-Drain Current(Diode Conduction) IS 0.8 Power Dissipation PD 1 W RθJA 157 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature V A 1 2022/12/15 2302 MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0V, ID =-250µA 20 VGS(th) VDS =VGS, ID =-250µA 0.5 Gate-source leakage IGSS VDS =0V, VGS =±10V Zero gate voltage drain current IDSS VDS = 20V, VGS =0V Typ Max Unit Static Drain-source breakdown voltage Gate-source threshold voltage Drain-source on-state resistancea Forward transconductancea Diode forward voltage V 0.7 1.1 V ±0.1 ±95 nA 1 µA VGS = 4.5V, ID = 3A 27 45 mΩ VGS = 2.5V, ID = 2A 35 55 mΩ gfs VDS = 4.5V, ID =2.8A 4 VSD IS=0.8A,VGS=0V 0.8 RDS(on) S 1.3 V Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitanceb Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance VDS = 10V,VGS =0V, f=1MHz VDS = 10V,VGS = 4.5V,ID =2.8A VDS = 10V,VGS = 2.5V, ID = 3A Rg f=1MHz 405 pF 75 pF 55 pF 5.5 10 3.3 6 nC 0.7 nC 1.3 nC 6.0 Ω Switchingb Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD= 10V RL=10Ω, ID ≈-1A, VGEN= 4.5V,Rg=1Ω tf 11 20 ns 35 60 ns 30 50 ns 10 20 ns 1 A 10 A Drain-source body diode characteristics Continuous Source-Drain Diode Current Pulsed Diode forward Curren IS Tc=25℃ ISM Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by desig n, not subj ect to p roduction testing . 2 2022/12/15 2302 TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS 3 2022/12/15