BC817-16

山东晶导微电子股份有限公司 BC817 Jingdao Microelectronics co.LTD SOT-23 BC817 NPN TRANSISTOR 3 FEATURES • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807 (PNP) 1 2 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Parameter Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol Value Unit V CBO V CEO V EBO IC PC TJ T stg 50 45 5 0.5 0.3 150 V V V A W ℃ -55~+150 ℃ 1.BASE 2.EMITTER 3.COLLECTOR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V CBO I C = 10uA, I E = 0 50 V Collector-emitter breakdown voltage V CEO I C = 10mA, I B = 0 45 V Emitter-base breakdown voltage V EBO I E = 1uA, I C = 0 5 V Collector cut-off current I CBO V CB = 45V, I E = 0 0.1 uA Emitter cut-off current I EBO V EB = 4V, I C =0 0.1 uA h FE(1) V CE = 1V, I C = 100mA 100 h FE(2) V CE = 1V, I C = 500mA 40 600 DC current gain Collector-emitter saturation voltage V CE(sat) I C = 500mA, I B = 50mA 0.7 V Base-emitter saturation voltage V BE(sat) I C = 500mA, I B = 50mA 1.2 V 1.2 V Base-emitter voltage V BE V CE = 1V, I C = 500mA Collecter capactiance C ob V CB = 10V,f=1MHz fT Transition frequency V CE = 5V, I C = 10mA, f=100MHz pF 10 100 MH Z CLASSIFICATION OF h FE Rank Range Marking 2021.08 BC817-16 BC817-25 BC817-40 100-250 160-400 250-600 6B 6A www.sdjingdao.com 6C Page 1 of 3 山东晶导微电子股份有限公司 BC817 Jingdao Microelectronics co.LTD TYPICAL CHARACTERICS 1mA 0.9mA 240 COMMON EMITTER T a =25℃ 0.8mA 200 0.7mA 0.6mA 160 0.5mA 120 0.4mA 0.3mA 80 0.2mA 40 I B =0.1mA 0 0 4 8 12 16 400 200 0 25 f=1MHz I E=0/ Ic=0 Ta=25℃ C ib 10 C ob 1 0 5 10 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) CAPACITANCE C (pF) Fig.4 C ob / C ib —— V CB / V EB Fig.3 150 V CEsat —— I C 0.2 Τ α =25℃ 0.1 β=10 0.0 0.1 h FE --Ic 1 100 10 500 Fig.6 V BEsat —— I C 1.2 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) DC CURRENT GAIN h FE 125 I C , COLLECTOR CURRENT (mA) Τ α =25℃ 100 COMMON EMITTER V CE =1V β=10 1.0 0.8 Τ α =25℃ 0.6 10 10 1 100 0.4 0.1 500 I C , COLLECTOR CURRENT (mA) Fig.8 TRANSITION FREQUENCY f T (MHz) I C —— V BE Fig.7 COMMON EMITTER V CE =1V 100 T a =25℃ 10 1 0 0.2 0.4 0.6 0.8 1.0 10 1 500 100 I C , COLLECTOR CURRENT (mA) 1000 COLLECTOR CURRENT I C (mA) 100 0.3 1000 f T ——I C 1000 100 1.2 COMMON EMITTER T a =25℃ V CE =5V 10 1 10 100 I C , COLLECTOR CURRENT (mA) BASE-EMMITER VOLTAGE V BE (V) 2021.08 75 0.4 REVERSE BIAS VOLTAGE V (V) Fig.5 50 AMBIENT TEMPERATURE Ta ( ℃) COLLECTOR-EMITTER VOLTAGE V CE (V) 100 P C —— T a Fig.2 COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT I C (mA) Fig.1 Static characteristics 280 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 BC817 Jingdao Microelectronics co.LTD SOT-23 Package Outline Dimensions e ∠ALL ROUND A D e M e E C a L1 L HE SOT-23 mechanical data UNIT mm A C D E max 1.1 0.20 1.4 3.0 min 0.9 0.08 1.2 2.8 mil HE e M L L1 a 2.6 0.6 1.95 0.55 0.36 0.15 (ref) (ref) 2.2 0.35 1.7 0.0 12° max 43 7.9 55 118 102 24 77 min 35 3.1 47 110 13 67 87 22 14 (ref) (ref) 6 0.0 Marking The recommended mounting pad size Type number 0.8 (0.031) 0.9 (0.039) 0.95 (0.037) ∠ 0.95 (0.037) Marking code BC817-16 6A BC817-25 6B BC817-40 6C 2.0 (0.079) mm Unit ： (inches) 2021.08 210831 Page 3 of 3