120N10

120N10 N-SGT Enhancement Mode MOSFET General Description The 120N10 use advanced SGT MOSFET technology to D D D D provide low RDS(ON), low gate charge, fast switchingand excellent avalanche characteristics. This device is specially designed to get better ruggedness S and suitable to use in General Features VDS =100V S S G DFN5X6-8L ID =60A D ! RDS(ON) < 10mΩ @ VGS=10V " G ! Applications ! " " " ! S Consumer electronic power supply Motor control N-Channel MOSFET Synchronous-rectification Isolated DC Synchronous-rectification applications Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) DFN5X6-8L 5000 Absolute Maximum Ratings at Tj=25℃ unless other wise noted Parameter Symbol Value Unit Drain source voltage VDS 100 V Gate source voltage VGS ±20 V ID 60 A ID, pulse 210 A PD 54 W EAS 71 mJ Tstg，Tj -55 to 150 ℃ Thermal resistance, junction-case RθJC 2.3 °C/W Thermal resistance, junction-ambient4) RθJA 60 °C/W Continuous drain current1) Pulsed drain current2) Power dissipation3) Single pulsed avalanche energy5) Operation and storage temperature 120N10 N-SGT Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol BVDSS Parameter Conditions Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA Min Typ Max Units 100 --- --- V μA IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA VGS(th) Gate-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.8 2.5 V RDS(ON) Drain-Source On Resistance3 VGS=10V,ID=10A --- 8.6 10 mΩ VGS=4.5V,ID=10A --- 11 15 mΩ --- 1615 --- --- 441 -- Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance --- 7.8 --- Turn-On Delay Time --- 9.4 --- ns td(on) tr td(off) VDD=50V,RD=5Ω --- 4.2 --- ns Turn-Off Delay Time RENG=10Ω,VGS=10V --- 25.2 --- ns --- 4.2 --- ns --- 31.5 --- nC --- 3.1 --- nC --- 14.7 --- nC --- 0.9 1.3 V --- --- 60 A --- --- 240 A Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain “Miller” Charge VSD Diode Forward Voltage ISM pF Rise Time tf IS VDS=50V, VGS=0V, f=1MHz Continuous Drain Curren Pulsed Drain Current Notes: VGS=10V, VDD=50V, ID=20A VGS=0V, ISD=20A VD=VG=0V 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition: TJ=25℃, VDD=50V, VG=10V, L=0.5mH 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% 120N10 N-SGT Enhancement Mode MOSFET TypicalCharacteristics Fig1. Typical Output Characteristics Fig3. On-Resistance Vs. Temperature Fig5. Typical.Capacitance Fig2. Typical Transfer Characteristics Fig4. Typical Source-Drain Diode Forward Voltage Fig6. Typical.Gate Charge 120N10 N-SGT Enhancement Mode MOSFET Fig7. Safe Operating Area Fig8. Normalized transient thermal impedance 120N10 N-SGT Enhancement Mode MOSFET DFN5X6-8L Package Information SYMBOL A A1 D D1 B B1 C C1 C2 Ɵ1 L1 L2 L3 H MM MIN 4.95 4.82 5.98 5.67 0.9 3.95 0.35 8° 0.63 1.2 3.415 0.24 NOM 5 4.9 6 5.75 0.95 0.254REF 4 0.4 1.27TYP 10° 0.64 1.3 3.42 0.25 INCH MAX 5.05 4.98 6.02 5.83 1 MIN 0.195 0.190 0.235 0.223 0.035 4.05 0.45 0.156 0.014 12° 0.65 1.4 3.425 0.26 8° 0.025 0.047 0.134 0.009 NOM 0.197 0.193 0.236 0.226 0.037 0.010REF 0.157 0.016 0.5TYP 10° 0.025 0.051 0.135 0.010 MAX 0.199 0.196 0.237 0.230 0.039 0.159 0.018 12° 0.026 0.055 0.135 0.010