SS22B THRU SS210B
Product specification
SS22B THRU SS210B
Features
MECHANICAL DATA
Ideal for surface mount applications
Case: Molded plastic
Easy pick and place
Epoxy: UL 94V-0 rate flame retardant
Built-in strain relief
Metallurgically bonded construction
Low forward voltage drop
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.093 grams
Reference News
PACKAGE OUTLINE
Pin Configuration
DO-214AA(SMB)
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SS22B THRU SS210B
MAXIMUM RATINGSAND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified .
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
SS22B SS23B SS24B SS25B SS26B SS28B SS29B SS210B UNITS
Maximum Recurrent Peak Reverse Voltage
20
30
40
50
60
80
90
100
V
Maximum RMS Voltage
14
21
28
35
42
56
63
70
V
Maximum DC Blocking Voltage
20
30
40
50
60
80
90
100
V
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms single half
sine-wave superimposed on rated load (JEDEC
method)
Maximum Instantaneous Forward Voltage at 2.0A
2.0
A
50
A
0.55
Maximum DC Reverse Current
at Rated DC Blocking Voltage
0.70
0.85
V
0.1
0.02
mA
5
2
mA
Typical Junction Capacitance (Note1)
170
pF
Typical Thermal Resistance R JA (Note 2)
75
C/W
Operating Temperature Range TJ
-65
+150
℃
Storage Temperature Range TSTG
-65
+150
℃
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Ambient.
Copyright© Msksemi Incorporated
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SS22B THRU SS210B
RATING AND CHARACTERISTIC CURVES (SS22 THRU SS210)
FIG.2-TYPICAL FORWARD
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
0.4
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C)
PEAK FORWAARD SURGE CURRENT,(A)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
~S
S
26
B
~S
S
22
B
SS
0.8
10
3.0
25
B
1.2
S
~S
SS
1.6
24
B
50
2.0
INSTANTANEOUS FORWARD CURRENT,(A)
AVERAGE FORWARD CURRENT,(A)
CHARACTERISTICS
2.4
SS
1.0
0B
21
B
28
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
50
.01
40
.1
.3
.5
.7
.9
1.1
1.3
1.5
FORWARD VOLTAGE,(V)
30
8.3ms Single Half
Tj=25 C
Sine Wave
20
JEDEC method
10
FIG.5 - TYPICAL REVERSE
0
CHARACTERISTICS
1
5
50
10
100
100
NUMBER OF CYCLES AT 60Hz
REVERSE LEAKAGE CURRENT, (mA)
FIG.4-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
350
300
250
200
150
100
10
1.0
Tj=75 C
.1
Tj=25 C
50
0
.01
.05
.1
.5
1
REVERSE VOLTAGE,(V)
Copyright© Msksemi Incorporated
5
10
50
100
.01
0
20
40
60
80
100 120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE
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SS22B THRU SS210B
PACKAGE MECHANICAL DATA
A
Dimensions
B
C
Ref.
H
F
G
D
E
L
J
K
Millimeters
Min.
Max.
Min.
Max.
A
4.25
4.75
0.167
0.187
B
3.30
3.94
0.130
0.155
C
1.85
2.21
0.073
0.087
D
0.76
1.52
0.030
0.060
E
5.08
5.59
0.200
0.220
F
0.051
0.203
0.002
0.008
G
0.15
0.31
0.006
0.012
H
2.11
2.44
0.083
0.096
J
6.80
L
0.270
2.60
K
DO-214AA (SMB)
Inches
2.40
0.100
0.090
REEL SPECIFICATION
P/N
SS22B THRU SS210B
Copyright© Msksemi Incorporated
PKG
QTY
SMB
3000
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SS22B THRU SS210B
Attention
■ Any and all MSKSEMI Semiconductor products described or contained herein do not
handle applications that require extremely high levels of reliability, such as life-support
have specifications
that can
systems, aircraft's control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest
you before using any MSKSEMI Semiconductor products described
or contained herein in such applications.
■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing
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or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
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written permission of MSKSEMI Semiconductor.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI
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Copyright© Msksemi Incorporated
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