ES2K

ES2A-ES2K 2.0 AMPS. Surface Mount Super Fast Rectifiers Features









SMB/DO-214AA Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Superfast recovery time for high efficiency Glass passivated chip junction High temperature soldering: O 260 C/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 0.180(4.57) 0.160(4.06) 0.086(2.20) 0.077(1.95) 0.155(3.94) 0.130(3.30) 0.209(5.30) 0.201(5.10) 0.012(0.30) 0.006(0.15) Mechanical Data



0.096(2.44) 0.084(2.13) Cases: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Weight: 0.093 gram 0.059(1.50) 0.035(0.90) Marking Information XXXX 0.008(0.20) 0.002(0.05) Dimensions in inches and(millimeters) LGE：Lu Guang Electronic XXXX：marking code (ES2A-ES2K) Maximum Ratings and Electrical Characteristics Rating at 25 O C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol ES ES ES Type Number 2A 2B 2C Maximum Recurrent Peak Reverse 50 100 150 V RRM Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 2.0A Maximum DC Reverse Current o @T A =25 C at Rated DC Blocking Voltage o @ T A =100 C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Maximum Thermal Resistance (Note 3) Operating Temperature Range Notes: ES 2G 400 ES 2J 600 ES 2K K 700 Units V 35 70 105 140 210 280 420 490 V V DC 50 100 150 200 300 400 600 700 V I(AV) 2.0 A IFSM 50 A VF 0.95 1.3 1.7 V IR 10 350 uA uA Trr 35 nS Cj R θJA R θJL 25 20 75 20 -55 to +150 -55 to +150 T STG 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A 2. Measured at 1 MHz and Applied V R =4.0 Volts 3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas ht t p : // Revision:20170701-P1 ES 2E 300 V RMS TJ Storage Temperature Range ES 2D 200 www.lgesemi .c o m pF o C /W o o C C mail:lge@lgesemi.com ES2A-ES2K 2.0 AMPS. Surface Mount Super Fast Rectifiers RATINGS AND CHARACTERISTIC CURVES (ES2A THRU ES2K) FIG.2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1000 RESISTIVE OR INDUCTIVE LOAD 0.4X0.4"(10X10mm) COPPER PAD AREAS INSTANTANEOUS REVERSE CURRENT. ( A) AVERAGE FORWARD CURRENT. (A) 3.0 2.0 1.0 0 80 90 100 120 110 140 130 150 o LEAD TEMPERATURE. ( C) FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 Tj=125 0C 10 Tj=85 0C 1 Tj=25 0C 0.1 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C 50 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 40 30 20 60 10 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0 40 ES 30 20 ES 2F- 2A -D -D -G 2F -K ES 1 ES JUNCTION CAPACITANCE.(pF) Tj=25 0C f=1.0MHz Vsig=50mVp-p 2A FIG.4- TYPICAL JUNCTION CAPACITANCE 60 ES NUMBER OF CYCLES AT 60Hz 50 10 INSTANTANEOUS FORWARD CURRENT. (A) 100 10 1 2H PEAK FORWARD SURGE CURRENT. (A) 60 0.1 K 10 0 1 0 0.01 0.4 100 10 0.6 0.8 REVERSE VOLTAGE. (V) 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE trr +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm PACKAGE SPQ/PCS CARTON SPQ/PCS CARTON SIZE/CM CARTON GW/KG CARTON NW/KG SMB 3000/REEL 48000 36X35.8X36.5 12.00 11.00 ht t p : // Revision:20170701-P1 0 -0.25A www.lgesemi .c o m mail:lge@lgesemi.com