3SMB5913B-3SMB5957B
Silicon Zener Diodes
VZ : 3.3 - 240 Volts
PD : 3. 0Watts
SMB (DO-214AA)
5.4 ± 0.15
* Complete Voltage Range 3.3 to 240 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
1.1 ± 0.3
4.8 ± 0 . 1 5
Features
0.22 ± 0.07
2.0 ± 0.1
Mechanical Data
2.3 ± 0.2
3.6 ± 0.15
* Case : SMB (DO-214AA) Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead formed for Surface mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.093 gram
Dimensions in millimeter
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
Symbol
Value
Unit
DC Power Dissipation at T L = 75 °C (Note1)
PD
3.0
Watts
Maximum Forward Voltage at IF = 200 mA
VF
1.5
Volts
Junction Temperature Range
TJ
- 55 to + 150
°C
Storage Temperature Range
Ts
- 55 to + 150
°C
Note :
2
(1) TL = Lead temperature at 5.0 mm ( 0.013 mm thick ) copper land areas.
Revision:20181026-P1
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3SMB5913B-3SMB5957B
Silicon Zener Diodes
ELECTRICAL CHARACTERISTICS
Rating at = 25 °C ambient temperature unless otherwise specified
TYPE
Nominal Zener
Voltage
V Z @ I ZT
IZT
(V)
(mA)
Z ZT @ I ZT
(Ω )
Maximum Zener
Impedance
Z ZK @ I ZK
(Ω )
IZK
(mA)
Maximum Reverse
Leakage Current
IR @ V R
(V)
(µA)
Maximum DC
Zener Current
IZM
(mA)
3SMB5913B
3.3
113.6
10
500
1.0
100
1.0
454
3SMB5914B
3.6
104.2
9.0
500
1.0
75
1.0
416
3SMB5915B
3.9
96.1
7.5
500
1.0
25
1.0
384
3SMB5916B
4.3
87.2
6.0
500
1.0
5.0
1.0
348
3SMB5917B
4.7
79.8
5.0
500
1.0
5.0
1.5
319
3SMB5918B
5.1
73.5
4.0
500
1.0
5.0
2.0
294
3SMB5919B
5.6
66.9
2.0
250
1.0
5.0
3.0
267
3SMB5920B
6.2
60.5
2.0
200
1.0
5.0
4.0
241
3SMB5921B
6.8
55.1
2.5
200
1.0
5.0
5.2
220
3SMB5922B
7.5
50.0
3.0
400
0.5
5.0
6.0
200
3SMB5923B
8.2
45.7
3.5
400
0.5
5.0
6.5
182
3SMB5924B
9.1
41.2
4.0
500
0.5
5.0
7.0
164
3SMB5925B
10
37.5
4.5
500
0.25
5.0
8.0
150
3SMB5926B
11
34.1
5.5
550
0.25
1.0
8.4
136
3SMB5927B
12
31.2
6.5
550
0.25
1.0
9.1
125
3SMB5928B
13
28.8
7.0
550
0.25
1.0
9.9
115
3SMB5929B
15
25.0
9.0
600
0.25
1.0
11.4
100
3SMB5930B
16
23.4
10
600
0.25
1.0
12.2
93
3SMB5931B
18
20.8
12
650
0.25
1.0
13.7
83
3SMB5932B
20
18.7
14
650
0.25
1.0
15.2
75
3SMB5933B
22
17.0
17.5
650
0.25
1.0
16.7
68
3SMB5934B
24
15.6
19
700
0.25
1.0
18.2
62
3SMB5935B
27
13.9
23
700
0.25
1.0
20.6
55
3SMB5936B
30
12.5
28
750
0.25
1.0
22.8
50
3SMB5937B
33
11.4
33
800
0.25
1.0
25.1
45
3SMB5938B
36
10.4
38
850
0.25
1.0
27.4
41
3SMB5939B
39
9.6
45
900
0.25
1.0
29.7
38
3SMB5940B
43
8.7
53
950
0.25
1.0
32.7
34
3SMB5941B
47
8.0
67
1000
0.25
1.0
35.8
31
3SMB5942B
51
7.3
70
1100
0.25
1.0
38.8
29
3SMB5943B
56
6.7
86
1300
0.25
1.0
42.6
26
3SMB5944B
62
6.0
100
1500
0.25
1.0
47.1
24
3SMB5945B
68
5.5
120
1700
0.25
1.0
51.7
22
3SMB5946B
75
5.0
140
2000
0.25
1.0
56.0
20
3SMB5947B
82
4.6
160
2500
0.25
1.0
62.2
18
3SMB5948B
91
4.1
200
3000
0.25
1.0
69.2
16
3SMB5949B
100
3.7
250
3100
0.25
1.0
76.0
15
3SMB5950B
110
3.4
300
4000
0.25
1.0
83.6
13
3SMB5951B
120
3.1
380
4500
0.25
1.0
91.2
12
3SMB5952B
130
2.9
450
5000
0.25
1.0
98.8
11
3SMB5953B
150
2.5
600
6000
0.25
1.0
114.0
10
3SMB5954B
160
2.3
700
6500
0.25
1.0
121.6
9.0
3SMB5955B
180
2.1
900
7000
0.25
1.0
136.8
8.0
3SMB5956B
200
1.9
1200
8000
0.25
1.0
152.0
7.0
3SMB5957B
240
1.5
1600
9000
0.25
1.0
182.4
6.0
Note :
( 1 ) Suffix " A " indicates ± 10% tolerance, suffix " B " indicates ± 5.0% tolerance.
Revision:20181026-P2
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3SMB5913B-3SMB5957B
Silicon Zener Diodes
RATING AND CHARACTERISTICS CURVES
5
Note 5
4
TL
3
2
1
TA
0
0
100
125
50
25
75
TA, AMBIENT TEMPERATURE ( °C)
Figure Power Dissipation
vs. Ambient Temperature
100
IZ , ZENER CURRENT (mA)
TC of VZ , TEMPERATURE COEFFICIENT
OF ZENER VOLTAGE (mV/°C)
250
6.2V
10
13V
15V
39V
1
0.1
0
200
150
100
50
0
0
150
20
30
40
50
VZ , ZENER VOLTAGE (V)
Figure 3 Typical Zener Breakdown Characteristics
100
IZ , ZENER CURRENT (mA)
PD, MAXIMUM POWER DISSIPATION (W)
6
50
100
150
VZ , ZENER VOLTAGE (V)
Figure 2 Typical Temperature Coefficient of
Zener Voltage vs. Zener Voltage
200
200V
10
1
0.1
50
200
250
150
VZ , ZENER VOLTAGE (V)
Figure 4 Typical Zener Breakdown Characteristics
10
100
1000
ZZ, DYNAMIC IMPEDANCE (Ω)
200V
100
3.3V
13V
10
6.2V
1
0.1
Revision:20181026-P3
ht t p : //
1
10
100
IZ , ZENER TEST CURRENT (mA)
Figure 6 Effect of Zener Current
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1000
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3SMB5913B-3SMB5957B
Silicon Zener Diodes
RATING AND CHARACTERISTICS CURVES
1800
CT, TOTAL CAPACITANCE (pF)
1400
1200
1000
800
V R = 0V
600
400
V R = VZ /2
200
0
100
1000
1
10
V Z, NOMINAL ZENER BREAKDOWN VOLTAGE (V)
Figure 7 Typical Total Capacitance
vs. Nominal Zener Breakdown Voltage
I PP, PEAK PULSE CURRENT (%Ip p)
f = 1MHz
1600
100
Peak Value I pp
Half Value I pp /2
50
tp
0
8x20 Waveform
as defined by R.E.A.
0
40
t, TIME ( µ s)
Figure 8 Pulse Waveform
60
0.01
0.1
1
td , PULSE DURATION (ms)
Figure 10 Max. Peak Pulse Power
vs. Pulse Duration
10
20
100
Pe a k Va lu e pp
I
H a lf Va lu e pp
I /2
50
tp
0
Revision:20181026-P4
P PK, PEAK PULSE POWER (kW)
IP, PEAK PULSE CURRENT (%Ip p)
10
0
1 0 X 1 0 0 0 Wa ve fo rm
a s d e fin e d b y R .E.A.
1
1
0.1
0.01
3
2
t, TIME (ms)
Figure 9 Pulse Waveform
PACKAGE
SPQ/PCS
CARTON
SPQ/PCS
CARTON
SIZE/CM
CARTON
GW/KG
CARTON
NW/KG
SMB
3000/REEL
48000
36X35.8X36.5
12.00
11.00
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3SMB5913B-3SMB5957B
Silicon Zener Diodes
SOLDERING PARAMETERS
Lead–free assembly
Reflow Condition
Pre Heat
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
- Time (min to max) (ts)
60 – 180 secs
Average ramp up rate (Liquidus Temp (TA) to peak
3°C/second max
TS(max) to TA - Ramp-up Rate
3°C/second max
Reflow
217°C
- Temperature (TA) (Liquidus)
60 – 150 seconds
- Time (min to max) (ts)
Peak Temperature (TP)
260+0/-5 °C
Time within 5°C of actual peak Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
Time 25°C to peak Temperature (TP)
8 minutes Max.
Do not exceed
260°C
tp
TP
Ramp-up
Temperature (T)
TL
tL
Critical Zone
TL to TP
Ts(max)
Ts(min)
Ramp-down
ts
Preheat
25˚C
t 25˚C to Peak
Time (t)
MOUNTING PAD LAYOUT
0.085 (2.159) MAX.
0.086 (2.18) MIN.
0.060 (1.52) MIN.
0.220 (5.59) REF.
Revision:20181026-P5
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