K200SB

KxxxSB Series Surface Monument High Voltage Bidirectional Trigger Diode Breakdowm Reverse Voltage 70 ~ 220 V Features ● Low reverse leakage DO-214AA/SMB ● High reliability ● High temperature soldering guaranteed: 260℃/10seconds on teminals ● Lead and body according with RoHS standard ● Bidirectional crowbar protection ● High forward surge current capability ● Will not fatigueThe plastic package carries Underwriters Laboratory, Flammability Classification 94V-0 ● Eliminate voltage overshoot caused by fast-rising transients ● Cannot be damaged by voltage Mechanical Data ● Case: JEDEC DO-214AA Molded plastic ● Lead: Pure tin plated, lead free Unit: inch (mm) ● Mounting Position : Any Electrical Parameters Part Number Marking K090SB VBO (V) VDRM VT IT IBO IDRM IH (V) Min. Typ. Max. (V) (A) (V) (V) (mA) K090 70 79 93 97 4.0 1.0 500 1.0 50 K105SB K105 90 95 105 110 4.0 1.0 500 1.0 50 K110SB K110 95 104 110 118 4.0 1.0 500 1.0 50 K120SB K120 100 110 122 125 4.0 1.0 500 1.0 50 K130SB K130 110 120 135 138 4.0 1.0 500 1.0 50 K140SB K140 120 130 140 146 4.0 1.0 500 1.0 50 K150SB K150 125 135 155 160 4.0 1.0 500 1.0 50 K160SB K160 130 140 163 170 4.0 1.0 500 1.0 50 K180SB K180 180 165 180 195 4.0 1.0 500 1.0 50 K200SB K200 180 190 205 215 4.0 1.0 500 1.0 50 K220SB K220 190 205 220 230 4.0 1.0 500 1.0 50 K240SB K240 200 220 240 250 4.0 1.0 500 1.0 50 K260SB K260 220 240 260 280 4.0 1.0 500 1.0 50 Note: 1) All measurements are made at an ambient temperature of 25℃. Thermal Considerations Package DO-214AA Symbol TJ Operating Junction Temperature TS Storage Temperature Range RθJA REV.1.1,2019-08 Parameter Junction to Ambient on printed circuit Changzhou zhide Electronics CO.,LTD Value Unit 125 ℃ -40 to +125 ℃ 53 ℃/W www.cz-zhide.com KxxxSB Series Characteristics Curves Figure 2. tr x td Pulse Wave-form Figure 1. V-I Characteristics +I IT IH tr=rise time to peak value td=decay time to half value 100 RS Peak Value IS IDRM -V Waveform = tr x td IBO +V VT VDRM VS Half Value 50 VBO 0 td tr t - Time (us) -I Figure 3. Normalized V S Change versus Figure 4. Normalized DC Holding Current versus Case Temperature Junction Temperature 2.0 IH （TC=25℃ ） 14 1.8 IH 10 8 6 4 1.6 1.4 25℃ Ratio of Percent of VS Change-% 12 2 0 -2 25℃ 1.2 1.0 0.8 -4 0.6 -6 Tj=25℃ 0.4 -8 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature （TJ） - ℃ REV.1.1,2019-08 -40 -20 0 20 40 60 80 100 120 140 160 Case Temperature （TJ） - ℃ Changzhou zhide Electronics CO.,LTD www.cz-zhide.com