ES2GB

www.msksemi.com ES2AB THRU ES2JB Semiconductor Compiance VOLTAGE RANGE 50 to 600 Volts CURRENT FEATURES 2.0 Amperes * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Metallurgically bonded construction * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 0.093 grams SMB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 C ambient temperature uniess otherwies specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. P/N(MARK) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current ES2AB ES2BB ES2CB ES2DB ES2EB ES2GB ES2JB UNITS 50 100 150 200 300 400 600 V V 35 70 105 140 210 280 420 50 100 150 200 300 400 600 V .375"(9.5mm) Lead Length at Ta=55 C Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 2.0A Maximum DC Reverse Current Ta=25 C at Rated DC Blocking Voltage Ta=100 C Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range TJ, TSTG A 2.0 60 1.25 0.95 1.70 A V 5.0 500 35 nS 60 -65 +150 pF C NOTES: 1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. www.msksemi.com ES2AB THRU ES2JB Semiconductor Compiance RATING AND CHARACTERISTIC CURVES (ES2AB THRU ES2JB) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10W NONINDUCTIVE ( ) D.U.T. 25Vdc (approx.) | | | | | | | | +0.5A (+) PULSE GENERATOR (NOTE 2) ( ) AVERAGE FORWARD CURRENT,(A) 50W NONINDUCTIVE 0 -0.25A (+) 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) -1.0A NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 1cm 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 2.4 2.0 1.6 Single Phase 1.2 Half Wave 60Hz Resistive Or Inductive Load 0.8 0.375"(9.5mm) Lead Length 0.4 0 SET TIME BASE FOR 0 25 50 FIG.3-TYPICAL FORWARD FIG.4-TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS B 2E 1.0 B- ES ES 2A 3.0 REVERSE LEAKAGE CURRENT, (mA) B- 2G B ES 2D 10 B 2J ES Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 .01 125 150 175 .4 .6 .8 1.0 1.2 1.4 1.6 10 3.0 1.0 Tj=100 C Tj=25 C 0.1 .01 1.8 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) FORWARD VOLTAGE,(V) FIG.6-TYPICAL JUNCTION CAPACITANCE FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 100 JUNCTION CAPACITANCE,(pF) PEAK FORWARD SURGE CURRENT,(A) 100 50 ES INSTANTANEOUS FORWARD CURRENT,(A) 50 75 AMBIENT TEMPERATURE,( C) 50 / 10ns / cm 80 60 Tj=25 C 8.3ms Single Half Sine Wave 40 JEDEC method 20 150 125 100 75 50 25 0 0 1 5 10 NUMBER OF CYCLES AT 60Hz 50 100 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) www.msksemi.com ES2AB THRU ES2JB Semiconductor Compiance PACKAGE MECHANICAL DATA A Dimensions B C Ref. H F G D E L J K Millimeters Min. Max. Min. Max. A 4.25 4.75 0.167 0.187 B 3.30 3.94 0.130 0.155 C 1.85 2.21 0.073 0.087 D 0.76 1.52 0.030 0.060 E 5.08 5.59 0.200 0.220 F 0.051 0.203 0.002 0.008 G 0.15 0.31 0.006 0.012 H 2.11 2.44 0.083 0.096 J 6.80 L 0.270 2.60 K DO-214AA (SMB) Inches 2.40 0.100 0.090 REEL SPECIFICATION P/N ES2AB THRU ES2JB PKG QTY SMB 3000 www.msksemi.com ES2AB THRU ES2JB Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. www.msksemi.com