S3MB

www.msksemi.com S3AB THRU S3MB Semiconductor Compiance VOLTAGE RANGE 50 to 1000 Volts CURRENT FEATURES 3.0 Ampere * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Low forward voltage drop MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Metallurgically bonded construction * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 0.093 grams SMB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 C ambient temperature uniess otherwies specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. P/N(MARK) S3AB S3BB S3DB S3GB S3JB S3KB 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current S3MB UNITS 1000 700 1000 V V V At TL=75 C Peak Forward Surge Current, 8.3 ms single half sine-wave 3.0 A superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 3.0A Maximum DC Reverse Current Ta=25 C 100 1.10 5.0 A V A at Rated DC Blocking Voltage Ta=125 C Typical Junction Capacitance (Note1) Typical Thermal Resistance RqJL (Note 2) Operating and Storage Temperature Range TJ, TSTG 250 A pF C/W C 60 13 -65 +150 NOTES: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2. Thermal Resistance Junction to Lead. www.msksemi.com S3AB THRU S3MB Semiconductor Compiance RATING AND CHARACTERISTIC CURVES (S3AB THRU S3MB) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 10 3.0 1.0 2.5 2.0 Single Phase 1.5 Half Wave 60Hz Resistive Or Inductive Load 1.0 0.375"(9.5mm) Lead Length 0.5 0 0 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .01 .6 .7 .8 .9 1.0 1.1 1.2 1.3 FORWARD VOLTAGE,(V) FIG.3 - TYPICAL REVERSE CHARACTERISTICS PEAK FORWARD SURGE CURRENT,(A) INSTANTANEOUS FORWARD CURRENT,(A) 50 3.0 100 80 60 8.3ms Single Half Tj=25 C Sine Wave 40 JEDEC method 20 0 1 100 5 50 10 100 NUMBER OF CYCLES AT 60Hz FIG.5-TYPICAL JUNCTION CAPACITANCE 140 Tj=100 C JUNCTION CAPACITANCE,(pF) REVERSE LEAKAGE CURRENT, ( A) 10 1.0 Tj=25 C .1 120 100 80 60 40 20 .01 0 0 20 40 60 80 .01 .05 .1 .5 1 5 10 50 100 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) REVERSE VOLTAGE,(V) www.msksemi.com S3AB THRU S3MB Semiconductor Compiance PACKAGE MECHANICAL DATA A Dimensions B C Ref. H F G D E L J K Millimeters Min. Max. Min. Max. A 4.25 4.75 0.167 0.187 B 3.30 3.94 0.130 0.155 C 1.85 2.21 0.073 0.087 D 0.76 1.52 0.030 0.060 E 5.08 5.59 0.200 0.220 F 0.051 0.203 0.002 0.008 G 0.15 0.31 0.006 0.012 H 2.11 2.44 0.083 0.096 J 6.80 L 0.270 2.60 K DO-214AA (SMB) Inches 2.40 0.100 0.090 REEL SPECIFICATION P/N S3AB THRU S3MB PKG QTY SMB 3000 www.msksemi.com S3AB THRU S3MB Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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