S5G

S5A~S5M 5A, 50V - 1000V Surface Mount Rectifier FEATURES ● ● ● ● ● ● Glass passivated chip junction Ideal for automated placement Low forward voltage drop High current capability High surge current capability Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 DO-214AB (SMC) APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA ● Case: DO-214AB (SMC) ● Molding compound meets UL 94V-0 flammability rating ● Moisture sensitivity level: level 1, per J-STD-020 T ● Terminal: Matte tin plated leads, solderable per J-STD-002 VWXYZ[\ ● Meet JESD 201 class 2 whisker test U ]^Z[\ ● Polarity: As marked ● Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) SYMBOL S5A S5B S5D S5G S5J S5K S5M Repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode Junction temperature IF(AV) 5 A IFSM 100 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C PARAMETER 0571-87006810 www.dowosemi.cn UNIT 1／3 S5A~S5M THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode RӨJL 13 °C/W Junction-to-ambient thermal resistance per diode RӨJA 47 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS Forward voltage per diode (1) IF = 5A, TJ = 25°C Reverse current @ rated VR per diode (2) Junction capacitance TJ = 25°C TYP. MAX. UNIT VF - 1.15 V - 10 µA - 250 µA CJ 60 - pF trr 1500 - ns IR TJ = 125°C 1 MHz, VR=4.0V IF=0.5A , IR=1.0A Reverse recovery time SYMBOL IRR=0.25A Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance 100 5 JUNCTION CAPACITANCE.(pF) AVERAGE FORWARD CURRENT (A) 6 4 3 2 1 RESISTIVE OR INDUCTIVE LOAD 0 10 f=1.0MHz Vsig=50mVp-p 1 0 25 50 75 100 125 150 10 100 REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) 0571-87006810 1 www.dowosemi.cn 2／3 S5A~S5M Fig.4 Typical Forward Characteristics 10 TJ=125°C 1 TJ=25°C 0.1 0 20 40 60 80 100 120 140 100 10 UF1DLW 1 10 TJ=125°C TJ=25°C 0.1 (A) INSTANTANEOUS FORWARD CURRENT (A) 100 1 0.01 0.001 0.3 0.1 0.6 0.7 0.4 0.8 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.5 0.9 0.6 1 0.7 1.1 Pulse width Pules width=300μs 1% duty cycle 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 FORWARD VOLTAGE (V) Fig.5 Maximum Non-repetitive Forward Surge Current PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.3 Typical Reverse Characteristics 100 8.3ms Single Half Sine Wave 10 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram 0571-87006810 www.dowosemi.cn 3／3 1.6 1.2