SS84

SS82 - SS810 SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 100V CURRENT: 8 .0 A Features ! Schottky Barrier Chip ! Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency For Use in Low Voltage Application Guard Ring Die Construction Plastic Case Material has UL Flammability Classification Rating 94V-O ! ! ! ! B SMC/DO-214AB Dim Min Max A 5.59 6.22 B 6.60 7.11 C 2.75 3.18 D 0.15 0.31 E 7.75 8.13




















































































Mechanical Data A ! Case: SMC/DO-214AB, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! ! ! C D Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.21 grams (approx.) J H G E G 0.10 0.20 H 0.76 1.52 J 2.00 2.62 All Dimensions in mm Maximum Ratings and Electrical Characteristics TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 90°C SS83 SS835 Symbol SS82 VRRM VRWM VR 20 30 VR(RMS) 14 21 SS84 SS85 SS86 SS88 SS810 Unit 35 40 50 60 80 100 V 24.5 28 35 42 56 70 V IO 8.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 200.0 A @IF = 8.0A V FM @TA = 25°C @TA = 100°C IRM 1.0 20 mA Typical junction capacitance (Note1) CJ 400 pF Typical Thermal Resistance (Note 2) R
JA 18 °C/W Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Operating Temperature Range Storage Temperature Range 0.85 0.65 V Tj -65 to +125 °C TSTG -65 to +150 °C Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2 ”(5.0x5.0mm) copper pad areas 1 of 2 www.sunmate.tw 01 2 3 4 5 1 34576>7?; 89: =; @8;3