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US5M

US5M

  • 厂商:

    MSKSEMI(美森科)

  • 封装:

    DO-214AB(SMC)

  • 描述:

  • 数据手册
  • 价格&库存
US5M 数据手册
www.msksemi.com US5A THRU US5M Semiconductor Compiance VOLTAGE RANGE 50 to 1000 Volts CURRENT FEATURES 5.0 Ampere * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Fast switching speed MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Metallurgically bonded construction * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 0.21 grams SMC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 C ambient temperature uniess otherwies specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current US5A 50 35 50 US5B US5D US5E US5G US5J US5K US5M UNITS 100 200 300 400 600 800 1000 V 70 140 210 280 420 560 700 V 100 200 300 400 600 800 1000 V at Ta=55 C Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 5.0A Maximum DC Reverse Current Ta=25 C at Rated DC Blocking Voltage Ta=100 C Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range TJ, TSTG A 5.0 120 1.3 10 1.0 1.7 200 50 75 15 -65 +150 A V A A nS pF C NOTES: 1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. www.msksemi.com US5A THRU US5M Semiconductor Compiance RATING AND CHARACTERISTIC CURVES (US5A THRU US5M) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10 N 1. 50 N 1. | | | | | | | | +0.5A D.U.T. PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) 0 OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -0.25A NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . -1.0A 1cm 100 FIG.3 -- FORWARD DERATING CURVE AMPERES 1.0 600\800\1000V 50\100\200V 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 5 AVERAGE FORWARD CURRENT AMPERES TJ=25 Pulse Width=300µS 0.01 z 400V 10 1.8 2 4 3 1 0 0 10 6 4      TJ=25 US5J -US5M 1 0.4 1 2 4 10 20 REVERSE VOLTAGE,VOLTS 40 75 100 125 150 175 100 8.3ms Single Half Sine-Wave 100 AMPERES US5A -US5G PEAK FORWARD SURGE CURRENT 60 40 0.1 0.2 50 FIG.5 -- PEAK FORWARD SURGE CURRENT 200 100 2 25 LEAD TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE 20 Single Phase Half Wave 60HZ Resistive or Inductive Load 2 INSTANTANEOUS FORWARD VOLTAGE, VOLTS JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 50 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz www.msksemi.com US5A THRU US5M Semiconductor Compiance PACKAGE MECHANICAL DATA B Dimensions H F A C Ref. D K J L J G E Millimeters Min. Max. Min. Max. A 5.75 6.25 0.226 0.246 B 6.90 7.40 0.272 0.291 C 2.75 3.25 0.108 0.128 D 0.95 1.52 0.037 0.060 E 7.70 8.20 0.303 0.323 F 0.051 0.203 0.002 0.008 G 0.15 0.31 0.006 0.012 H 2.15 2.62 0.085 0.103 J 2.40 L 0.094 0.165 4.20 K SMC Inches 3.30 0.130 REEL SPECIFICATION P/N US5A THRU US5M PKG QTY SMC 3000 www.msksemi.com US5A THRU US5M Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. www.msksemi.com

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US5M
    •  国内价格
    • 10+0.29676
    • 100+0.24038
    • 300+0.21219
    • 3000+0.19100
    • 6000+0.17409
    • 9000+0.16563

    库存:636