ES3J

www.msksemi.com ES3J Semiconductor Compiance FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Super fast recovery time for high speed switching MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Metallurgically bonded construction * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 0.21 grams SMC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 C ambient temperature uniess otherwies specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. P/N(MARK) ES3J UNITS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 600 420 600 V V V at TL=100 C Peak Forward Surge Current, 8.3 ms single half sine-wave 3.0 A superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 3.0A Maximum DC Reverse Current Ta=25 C 100 1.7 10 A V A 500 35 45 -65 +150 A nS at Rated DC Blocking Voltage Ta=100 C Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range TJ, TSTG pF C NOTES: 1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. www.msksemi.com ES3J Semiconductor Compiance RATING AND CHARACTERISTIC CURVES (ES3J) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 50 Tj=25 C 10 Pulse Width 300us 1% Duty Cycle 3.0 1.0 3.0 2.5 2.0 Single Phase 1.5 Half Wave 60Hz Resistive Or Inductive Load 1.0 0.5 0 0 20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE ( C) 0.1 .01 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE ( ) (+) D.U.T. 25Vdc (approx.) PULSE GENERATOR (NOTE 2) ( ) PEAK FORWARD SURGE CURRENT,(A) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 125 100 75 Sine Wave 50 JEDEC method 25 0 1 5 (+) 1W NONINDUCTIVE 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 0 140 JUNCTION CAPACITANCE,(pF) | | | | | | | | -0.25A 100 FIG.5-TYPICAL JUNCTION CAPACITANCE NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. +0.5A 50 10 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 1) trr 8.3ms Single Half Tj=25 C 120 100 80 60 40 20 0 -1.0A 1cm SET TIME BASE FOR .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) 50 / 10ns / cm www.msksemi.com ES3J Semiconductor Compiance PACKAGE MECHANICAL DATA B Dimensions H F A C Ref. D K J L J G E Millimeters Inches Min. Max. Min. Max. A 5.75 6.25 0.226 0.246 B 6.90 7.40 0.272 0.291 C 2.75 3.25 0.108 0.128 D 0.95 1.52 0.037 0.060 E 7.70 8.20 0.303 0.323 F 0.051 0.203 0.002 0.008 G 0.15 0.31 0.006 0.012 H 2.15 2.62 0.085 0.103 J 2.40 0.165 4.20 K L 0.094 3.30 0.130 SMC REEL SPECIFICATION P/N PKG QTY ES3J SMC 3000 www.msksemi.com ES3J Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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