ES5J

www.msksemi.com ES5A THRU ES5J Semiconductor Compiance FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Super fast recovery time for high speed switching MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Metallurgically bonded construction * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 0.21 grams SMC MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating 25 C ambient temperature uniess otherwies specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. P/N(MARK) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current ES5A ES5B ES5C ES5D ES5E ES5G 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 at TL=100 C Peak Forward Surge Current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage at 5.0A Maximum DC Reverse Current Ta=25 C at Rated DC Blocking Voltage Ta=100 C Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range TJ, TSTG ES5J UNITS 600 600 600 A 5.0 120 5 A V A 500 35 A nS 1.25 0.95 1.75 25 40 -65 V V V +150 pF C NOTES: 1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1MHz and applied reverse voltage of 4.0V D.C. www.msksemi.com ES5A THRU ES5J Semiconductor Compiance RATING AND CHARACTERISTIC CURVES (ES5A THRU ES5J) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE FIG.1- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10W NONINDUCTIVE ( ) D.U.T. 25Vdc (approx.) | | | | | | | | +0.5A (+) PULSE GENERATOR (NOTE 2) ( ) AVERAGE FORWARD CURRENT,(A) 50W NONINDUCTIVE 0 -0.25A (+) 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) -1.0A NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 1cm 2. Rise Time= 10ns max., Source Impedance= 50 ohms. 6 5 4 Single Phase 3 Half Wave 60Hz Resistive Or Inductive Load 2 0.375"(9.5mm) Lead Length 1 0 SET TIME BASE FOR 0 25 50 FIG.4-TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS 10 10 REVERSE LEAKAGE CURRENT, ( A) 50 S5 ES ES 5E 5J -E A- 1.0 G ES5 D 3.0 ES5 INSTANTANEOUS FORWARD CURRENT,(A) FIG.3-TYPICAL FORWARD 50 Tj=25 C Pulse Width 300us 1% Duty Cycle 0.1 .01 .4 .6 .8 1.0 1.2 1.4 1.6 100 125 150 175 3.0 1.0 Tj=100 C Tj=25 C 0.1 1.8 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) FORWARD VOLTAGE,(V) FIG.6-TYPICAL JUNCTION CAPACITANCE FIG.5-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 120 JUNCTION CAPACITANCE,(pF) PEAK FORWARD SURGE CURRENT,(A) 75 AMBIENT TEMPERATURE,( C) 50 / 10ns / cm 90 60 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 30 150 125 100 ES 5A -E 75 S5 G 50 ES5 E-E 25 S5J 0 0 1 5 10 NUMBER OF CYCLES AT 60Hz 50 100 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) www.msksemi.com ES5A THRU ES5J Semiconductor Compiance PACKAGE MECHANICAL DATA B Dimensions H F A C Ref. D K J L J G E Millimeters Inches Min. Max. Min. Max. A 5.75 6.25 0.226 0.246 B 6.90 7.40 0.272 0.291 C 2.75 3.25 0.108 0.128 D 0.95 1.52 0.037 0.060 E 7.70 8.20 0.303 0.323 F 0.051 0.203 0.002 0.008 G 0.15 0.31 0.006 0.012 H 2.15 2.62 0.085 0.103 J 2.40 0.165 4.20 K L 0.094 3.30 0.130 SMC REEL SPECIFICATION P/N ES5A THRU ES5J PKG QTY SMC 3000 www.msksemi.com ES5A THRU ES5J Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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