Guangdong Niuhang
Electronic Technology Co., Ltd
Specification
For Approval
BTA12A-600XW
✔
Pb RoHS
THREE-QUADRANT TRIAC
VOLTAGE:
600
Volts
12
CURRENT：
Ampers
Pb-Frce
Package:
TO-220A
Marking and Polarity
FEATURES
·
·
·
·
COMPLIANT
T2
Highly di/dt For High Reliability
Low On-State Voltage For Low Power Consumption
FFYWW
LLWWF
Ceramic Pad For Internal Insulation
G
BTA12A-600XW
RoHS Compliant
TYPICAL APPLICATIONS
·
·
·
T1
Phase Control Operation Of Light Dimmers And Motor Speed Controllers
T1 T2 G
ON/OFF Control Operation Of Heating Regulation And Induction Motor
Weight:App. 2.057 Grams（0.07255 Ounce)
Remark:
PRODUCT SUMMARY
Item
①. NH=Niuhang Trademark
TW
SW
CW
BW
Unit
②. FF=Product Line Code,According To Actual Changes
IT(RMS)
12
A
YWW=Date Code,,According To Actual Changes
VDRM/VRRM Min.
600
V
LLWWF=Inernal Code,,According To Actual Changes
IGT(Ⅰ-Ⅱ-Ⅲ) Max.
5
10
35
50
③. BTA12A-600XW=Model,XW=TW,SW,CW,BW
mA
Absolute Maximum Ratings (Ta=25℃ Unless otherwise specified)
Symbol
BTA12A-600XW
Unit
Repetitive Peak Off-State Voltage
VDRM
600
V
Repetitive Peak Reverse Voltage
VRRM
600
V
IT(RMS)
12
A
ITSM
120
A
2
It
72
A
di/dt
100
A/µs
IGM
4.0
A
PG(AV)
0.5
W
TMM
1.1
N.m
Symbol
BTA12A-600XW
Unit
Parameter
Test Conditions
RMS On-State Current
Non Repetitive Surge Peak On-State Current
Tc≤
F=
2
50
℃
Hz,Tp=
Tp=
I T Value For Fusing
80
10
20 ms
ms
IG=2*IGT, tr≤10ns
Critical Rate Of Rise Of On-State Current
Peak Gate Current
F=
100
Hz,Tj=
125 ℃
Tp=
20
µs,Tj=
125 ℃
Average Gate Power Dissipation
Tj=
125
Maximum Mounting Torque
M3 srew
℃
Thermal Characteristcs (Ta=25℃ Unless otherwise specified )
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Typical Thermal Resistance
Http://www.nh-semicon.com
Date:2014/10/20
TJ
-40
to
125
TSTD
-40
to
150
℃
R θJA
60.0
R θJC
2.3
Rev.:A/1
℃/W
Page: 1 of 6
R&D-TD-001
Guangdong Niuhang
Electronic Technology Co., Ltd
Specification
For Approval
BTA12A-600XW
✔
Pb RoHS
THREE-QUADRANT TRIAC
Pb-Frce
COMPLIANT
Electrical Characteristcs (Ta=25℃ Unless otherwise specified )
Quadrants
Parameter
Test Conditions
Symbol
Gate Trigger Current
VD=12V,IT=0.1A
I GT
Ⅰ-Ⅱ-Ⅲ
Gate Trigger Voltage
VD=12V,IT=0.1A
V GT
Ⅰ-Ⅱ-Ⅲ
Holding Current
IT=100mA
IH
Latching Current
IG=1.2*IGT
IL
Rise Of Off- State Voltage
VD=2/3*VDRM,Gate open,Tj
=150°C
Peak On-State Voltage
IT=
12
A,
TW
SW
CW
BW
≤5
≤10
≤35
≤50
≤
≤35
≤50
Ⅰ-Ⅲ
≤10
≤25
≤50
≤70
Ⅱ
≤15
≤30
≤60
≤90
≥100
≥500 ≥1000 ≥2000
VD=VDRM, Tj =25°C
Peak Repetitive Forward Blocking Current
I DRM
VD=VDRM, Tj =125°C
VR=VRRM, Tj =25°C
Peak Repetitive Reverse Blocking Current
I RRM
VR=VRRM, Tj =125°C
mA
V
≤15
V TM
Unit
1
≤10
dv/dt
Tj =25°C
Value
mA
mA
V/us
≤
1.50
V
≤
5
uA
≤
0.4
mA
≤
5
uA
≤
0.4
mA
Model and identification instructions
BT
1
12
A
600
-
xW
Productor Type
BT=TRIAC
Insulation Spec.:
A=Insulation
B=No insulation
IT(RMS) Spec.:
12
=
12A
Package Spec.:
A=
TO-220A
"-"=Connector
constant
VDRM/VRRM Spec.
600
=
600V
IGT Spec.
TW:IGTⅠ-Ⅲ≤5mA
SW:IGTⅠ-Ⅲ≤10mA
CW:IGTⅠ-Ⅲ≤35mA
BW:IGTⅠ-Ⅲ≤50mA
Http://www.nh-semicon.com
Date:2014/10/20
Rev.:A/1
Page: 2 of 6
R&D-TD-001
Guangdong Niuhang
Electronic Technology Co., Ltd
Specification
For Approval
BTA12A-600XW
✔
Pb RoHS
THREE-QUADRANT TRIAC
Pb-Frce
COMPLIANT
IT(RMS)-RMS On-state Current(A)
PD-Maximum Power Dissipation(W)
Typical Characteristics Curves
IT(RMS)-RMS On-state Current(A)
Fig.1-RMS on-state current vs. case temperature
Fig.2- Maximum Power Dissipation Vs. on-state current
PD-Maximum Power Dissipation(W)
IDM-Surge Peak On-state Current(A)
TC-Case Temp (℃)
Number Of Cycles
Fig.3- Maximum Power Dissipation Vs. on-state current
Fig.4- Surge Peak On-state Current Vs. Number Cycles
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
IT(RMS)-RMS On-state Current(A)
TJ-Junction Temperature(℃)
Fig.5- Relative Variation Of Gate Trigger Current , Holding Current And
Latching Current Versus Junction Temperature (Typical Value)
Http://www.nh-semicon.com
Date:2014/10/20
Rev.:A/1
Page: 3 of 6
R&D-TD-001
Guangdong Niuhang
Electronic Technology Co., Ltd
Specification
For Approval
BTA12A-600XW
✔
Pb RoHS
THREE-QUADRANT TRIAC
OUTLINE DRAWINGS
COMPLIANT
Pb-Frce
TO-220A
OUTLINE DIMENSIONS
Milimeters
Inches
Dim.
Min.
Typ.
Max.
Min.
Typ.
Max.
A
9.25
--
10.75
0.3642
--
0.4232
B
1.15
--
1.45
0.0453
--
0.0571
C
4.20
--
4.70
0.1654
--
0.1850
D
0.45
--
0.65
0.0177
--
0.0256
E
14.70
--
16.70
0.5787
--
0.6575
F
8.55
--
10.05
0.3366
--
0.3957
G
12.50
--
14.50
0.4921
--
0.5709
H
3.00
--
4.00
0.118
--
0.157
J
1.20
--
1.40
0.0472
--
0.0551
K
0.70
--
1.00
0.0276
--
0.0394
M
2.20
--
3.00
0.0866
--
0.1181
O
3.45
--
4.15
0.1358
--
0.1634
P
2.40
--
3.40
0.0945
--
0.1339
PACKING INFORMATION
Package
Code
TO-220A
Http://www.nh-semicon.com
Package
Method
Box Size
L×W×H (mm)
Quantity
(pcs/box)
Carton Size
L×W×H (mm)
Quantity
(pcs/carton)
Tube Packaging
570*153*47
1000
580*250*180
5000
Date:2014/10/20
Rev.:A/1
Page: 4 of 6
R&D-TD-001
Guangdong Niuhang
Electronic Technology Co., Ltd
Specification
For Approval
BTA12A-600XW
THREE-QUADRANT TRIAC
✔
Pb RoHS
Pb-Frce
COMPLIANT
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Recommended temperature profile for IR reflow
Note : All temperatures refer to topside of the package, measured on the package body surface.
Http://www.nh-semicon.com
Date:2014/10/20
Rev.:A/1
Page: 5 of 6
R&D-TD-001
Guangdong Niuhang
Electronic Technology Co., Ltd
Specification
For Approval
BTA12A-600XW
THREE-QUADRANT TRIAC
✔
Pb RoHS
Pb-Frce
COMPLIANT
Disclaimer
●
Reproducing and modifying informatiom of the document is prohibited without permission
from niuhang Electronics co., LTD
●
Niuhang Electronics co., LTD. reserves the rights to make changes of the content herein
the document anytime without notification.
●
Niuhang Electronics co., LTD. disclaims any and all liability arising out of the application or
use of any product including damages incidentally and consequentially occurred.
●
Niuhang Electronics co., LTD. does not assume any and all implied warranties,
including warranties of fitness for particular purpose,non-infringement and merchantability.
●
Applications shown on the herein document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.
Niuhang Electronics co., LTD.makes no representation or warranty that such applications will
be suitable for the specified use without further testing or modification.
●
The products shown herein are not designed and authorized for equipments requiring high
level of reliability or relating to human life and for any applications concerning life-saving or
life-sustaining,such as medical instruments.transportation equipment,aerospae machinery
et cetera.Customers usin or selling these products for use in such applications do so at their
own rish and agree to fully indemnify Niuhang Electronics co., LTD.for any damages resulting
resulting from such improper use or sale.
●
When the appearance of the product and chip size does not change, in order to product
the customer. quality, change the internal structure and the production process Niuhang can not notify
Http://www.nh-semicon.com
Date:2014/10/20
Rev.:A/1
Page: 6 of 6
R&D-TD-001
