TM150P04T

台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM150P04T General Description General Features • Low R DS(ON) • RoHS and Halogen-Free Compliant VDS =-40V ID =-150A R DS(ON)= 3.0 mΩ (typ .)@VGS= -10V Applications • Load switch • PWM 公 限 100% UIS Tested 100% Rg Tested （无 D D 体 D 导 G 懋 台 Absolute M axim um Ratings：(TC=25℃ Drain-Source Voltage VGS Gate-Source Voltage 司 unless otherwise noted) Ratings -40 ） 锡 Continuous Drain Curren 无 Continuous Drain Current-TC=100℃ （ Pulsed Drain Current PD Power Dissipation EAS Single pulse avalanche energy 体 公 限 有 ±20 IDM TJ, TSTG S Parameter VDS ID D 半 S Marking: 150P04 Symbol ）有 锡 T:TO-263-3L G 司 Units V V -150 -98 A -560 导 250 W 612 mJ Operating and Storage Junction Temperature Range -55-+175 ℃ 半 懋 Thermal Characteristics： Symbol 台 Parameter Max Units RƟJC Thermal Resistance, Junction to Case 2 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62 ℃/W Rev23.09 1/6 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM150P04T Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -40 Zero Gate Voltage Drain Current IDSS VDS=-40V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA Drain-Source On-State Resistance RDS(ON) Typ Off Characteristics V 1 μA - ±100 nA -1.0 -1.75 -2.0 V VGS=-10V, ID=-75A - 3.0 4.3 mΩ VGS=-4.5V, ID=-75A - 4.4 5.5 mΩ - 30 - S Dynamic Characteristics - 14177 - PF - 1067 - PF - 301 - PF - 18 - nS - nS Reverse Transfer Capacitance Switching Characteristics 导 半 (Note 2) 懋 Turn-on Delay Time Coss VDS=-20V,VGS=0V, Crss F=1.0MHz 台 td(on) Turn-Off Delay Time Turn-Off Fall Time （无 VDS=-5V,ID=-75A Clss Output Capacitance Turn-on Rise Time 锡 体 Input Capacitance - 90 司 - nS 15 - nS - 104.4 - nC - 20.8 nC - 13.5 nC tr VDD=-20V,ID=-75A - 13 td(off) VGS=-10V,RG=1.6Ω - 公 tf - Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-20V,ID=-75A, VGS=-10V Diode Forward Voltage VSD Diode Forward Current IS Reverse Recovery Time trr 无 体 （ Qrr 锡 VGS=0V,IS=-75A 限 有 ） Drain-Source Diode Characteristics Reverse Recovery Charge 公 限 ）有 gFS 司 - - -1.3 V -150 A TJ = 25°C, IF =-75A - 28 nS di/dt = 100A/μs - 26 nC 导 半 懋 台 Rev23.09 Unit - On Characteristics Forward Transconductance Max 2/6 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM150P04T -ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics 司 公 限 ）有 锡 （无 -Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) 体 Figure 1 Output Characteristics 导 -Vgs Gate-Source Voltage (V) 半 台 体 Rdson On-Resistance(mΩ) 台 ID- Drain Current (A) Figure 3 Rdson- Drain Current Rev23.09 无 （ Figure 2 Transfer Characteristics 懋 公 限 有 ） 锡 -Vgs Gate-Source Voltage (V) 半 司 Qg Gate Charge (nC) Figure 5 Gate Charge Is- Reverse Drain Current (A) -ID- Drain Current (A) 懋 导 Figure 4 Rdson-JunctionTemperature Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward 3/6 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet Capacitance (pF) Power Dissipation (W) TM150P04T Vds Drain-Source Voltage (V) 司 公 限 ）有 锡 （无 TA-Junction Temperature(℃) 体 Figure 7 Capacitance vs Vds Figure 9 Power De-rating 导 半 -ID- Drain Current (A) -ID- Drain Current (A) 懋 台 司 公 限 有 ） 锡 -Vds Drain-Source Voltage (V) 无 （ Figure 8 Safe Operation Area(Note 3) TA-Junction Temperature (℃) Figure 10 Current De-rating 体 r(t),Normalized Effective Transient Thermal Impedance 导 半 懋 台 Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Rev23.09 4/6 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM150P04T Package Mechanical Data: TO-263-3L 司 公 限 ）有 锡 （无 体 导 半 懋 司 台 公 限 有 ） 锡 无 （ 体 导 半 懋 台 Rev23.09 5/6 台懋半导体（无锡）有限公司 P-Channel Enhancement Mosfet TM150P04T Important Notices and Disclaimers 司 公  Tritech-MOS Technology Corp.reserves the right to change thisdocument, 限 its products, and specifications at any time without prior notice.  Before final design, purchase, or use, customers should obtain and confirm the latest product information and specifications. ）有 锡  Tritech-MOS Technology Corp. makes no warranties, representations or warranties （无 regarding the suitability of its products for any specific purpose, and Tritech-MOS Technology Corp. does not assume any responsibility for application assistance or customer product design. 体 导  Tritech-MOS Technology Corp. does not guarantee or assume any 半 responsibility for the purchase or use of any unexpected or unauthorized products.  Any intellectual property rights of Tritech-MOS Technology Corp. are not licensed through implicate or other means. 懋 台  Products of Tritech-MOS Technology Corp. are not included as critical 司 公 限 components in life support equipment or systems without explicit written approval from Tritech-MOS Technology Corp. 有 ） 锡 无 Revision history: Date Rev 体 （ 导 2023.09.19 23.09 Description Page Original 半 懋 台 Rev23.09 6/6