TM08P04S

TM08P04S P-Channel Enhancement Mosfet General Description General Features • Low R DS(ON) • RoHS and Halogen-Free Compliant VDS = -40V ID =-7.8A RDS(ON) = 32 mΩ @ VGS=-10V Applications • Load switch • PWM 司 公 限 ）有 100% UIS Tested 100% Rg Tested 锡 S:SOP-8L （无 D 体 导 PIN1 S S 半 PIN1 S D D D G 懋 Marking: 08P04 台 Absolute Maximum Ratings (T A = 25°C Unless Otherwise Noted) Symbol VDS Parameter Rating Drain-Source Voltage -40 司 公 限 VGS Gate-Source Voltage ID@TA=25℃ Continuous Drain Current, VGS @ 10V ID@TA=70℃ Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy PD@TA=25℃ 有 Units V ±20 V -7.8 A -5.7 A -30 A 36 mJ Total Power Dissipation 3.1 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ （ 体 导 Symbol 台 Rev24.05 半 懋 RθJA RθJC 锡 无 Thermal Data ） Max. Unit Thermal Resistance Junction-ambient Parameter Typ. --- 80 ℃/W Thermal Resistance Junction-Case --- 25 ℃/W 1/7 TM08P04S P-Channel Enhancement Mosfet Electrical Characteristics：(TC=25℃ Symbol unless otherwise noted) Parameter Conditions Min Typ Max Units --- --- V 司 Off Characteristics BVDSS 公 Dra i n-Sourtce Breakdown Voltage VGS =0V,I D=250μA IDSS Zero Ga te Voltage Drain Current VGS =0V, VDS=-32V, TJ=25℃ 限 --- --- -1 μA IGSS Ga te-Source Leakage Current VGS =±20V, VDS =0A --- --- ±100 nA VGS =VDS, I D=250μA -1.4 -1.75 -2.0 V VGS =-10V,I D=-6A --- 32 41 VGS =-4.5V,I D=-3A --- 42 58 VDS=-5V, I D=-6A --- 12 --- ）有 On Characteristics VGS(th) GATE-Source Threshold Vol tage RDS(ON) Dra i n-Source On Resistance 锡 （无 体 mΩ 导 半 GFS -40 Forwa rd Tra nsconductance 懋 Dynamic Characteristics 1004 司 108 --- --- 80 --- --- 19.2 --- ns VDS=-15V, VGS=-10V --- 12.8 --- ns I D=-1A,R GEN=3.3Ω --- 48.6 --- ns --- 4.6 --- ns --- 9 --- nC --- 2.54 --- nC --- 3.1 --- nC V 台 Ciss Input Ca pacitance Output Ca pacitance Crss Reverse Tra nsfer Ca pacitance 有 （ 体 导 Fa ll Ti me Qg Tota l Gate Charge Qgd 无 Turn-Off Delay Ti me tf Qgs 锡 Ri s e Time td(off) 半 懋 Ga te-Source Cha rge 台 --- --- pF ） Turn-On Delay Ti me tr 限 VDS=-15V, VGS=0V, f=1MHz Switching Characteristics td(on) 公 --- Coss S VDS=-20V , VGS =-4.5V , I D=-6A Ga te-Drain “Miller” Charge Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS =0V,I S=-1A, TJ =25℃ --- --- -1 LS Conti nuous Source Current VG=VD=0V , Force Current --- --- -7.8 --- --- -15 LSM Rev24.05 Pul s ed Source Current 2/7 TM08P04S P-Channel Enhancement Mosfet Typical Characteristics： (TC=25℃ unless otherwise noted) 60 12 ID=-6A VGS=-10V 司 VGS=-7V VGS=-5V 8 6 公 RDSON (mΩ) -ID Drain Current (A) 10 55 50 限 45 VGS=-4.5V ）有 40 4 VGS=-3V 锡 2 （无 0 0 0.5 1 1.5 35 体 -VDS Drain-to-Source Voltage (V) 30 2 2 导 Fig.1 Typical Output Characteristics -VGS Gate to Source Voltage (V) -IS Source Current(A) 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-6A 8 司 公 6 限 4 有 ） 2 锡 无 1 -VSD , Source-to-Drain Voltage (V) 0 0 （ Fig.3 Forward Characteristics of Reverse 体 导 12 18 Fig.4 Gate-Charge Characteristics 2.0 半 懋 1 6 QG , Total Gate Charge (nC) Normalized On Resistance Normalized -VGS(th) 1.5 10 VDS=-20V 台 8 8 Voltage 10 懋 10 6 -VGS (V) Fig.2 On-Resistance v.s Gate-Source 半 12 4 1.5 台 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) Fig.5 Normalized VGS(th) v.s TJ Rev24.05 150 -50 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ 3/7 150 TM08P04S P-Channel Enhancement Mosfet 10000 100.00 Capacitance (pF) F=1.0MHz 司 10.00 Ciss 公 -ID (A) 1000 ）有 Coss 100 0.10 Crss 锡 （无 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) Fig.7 Capacitance 1ms 10ms 100ms DC Tc=25o C Single Pulse 0.01 25 0.1 体 1 半 DUTY=0.5 懋 司 台 0.3 公 0.1 0.1 10 -VDS (V) Fig.8 Safe Operating Area 导 1 Normalized Thermal Response (RθJC) 21 100us 限 1.00 0.05 PDM 有 限 ） 0.02 锡 SINGLE PULSE 0.01 0.01 0.00001 0.0001 无 0.001 0.01 TON T D = TON/T TJpeak = TC + PDM x RθJC 0.1 1 10 t , Pulse Width (s) （ Fig.9 Normalized Maximum Transient Thermal Impedance 体 导 半 懋 台 Fig.10 Switching Time Waveform Rev24.05 Fig.11 Unclamped Inductive Waveform 4/7 100 TM08P04S P-Channel Enhancement Mosfet Package Mechanical Data: SOP-8L 司 公 限 ）有 锡 （无 体 导 半 懋 司 台 公 限 有 ） 锡 无 （ 体 导 半 懋 台 Rev24.05 5/7 TM08P04S P-Channel Enhancement Mosfet SOP-8L SOP-8L 司 公 限 ）有 锡 （无 SOP-8L 体 SOP-8L 导 半 懋 司 台 公 限 有 SOP-8L ） 锡 无 （ 体 导 半 懋 台 Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 13''Dia Ø330.00 100.00 13.00 R135.00 R55.00 R6.50 12.00 14.00 G.W.(kg) REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) 3,000 pcs 13 inch 6,000 pcs 370×355×52 48,000 pcs 400×360×368 Rev24.05 6/7 TM08P04S P-Channel Enhancement Mosfet Important Notices and Disclaimers 司 公  Tritech-MOS Technology Corp.reserves the right to change thisdocument, 限 its products, and specifications at any time without prior notice.  Before final design, purchase, or use, customers should obtain and confirm the latest product information and specifications. ）有 锡  Tritech-MOS Technology Corp. makes no warranties, representations or warranties （无 regarding the suitability of its products for any specific purpose, and Tritech-MOS Technology Corp. does not assume any responsibility for application assistance or customer product design. 体 导  Tritech-MOS Technology Corp. does not guarantee or assume any 半 responsibility for the purchase or use of any unexpected or unauthorized products.  Any intellectual property rights of Tritech-MOS Technology Corp. are not licensed through implicate or other means. 懋 台  Products of Tritech-MOS Technology Corp. are not included as critical 限 有 components in life support equipment or systems without explicit written approval from Tritech-MOS Technology Corp. Revision history: Date Rev 体 2024.05.13 半 台 Rev24.05 导 24.05 锡 无 （ 司 公 ） Description Page Original 懋 7/7